PSMN050-80PS NXP Semiconductors, PSMN050-80PS Datasheet

PSMN050-80PS

Manufacturer Part Number
PSMN050-80PS
Description
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PSMN050-80PS
Manufacturer:
NXP
Quantity:
51 000
1. Product profile
Table 1.
[1]
Symbol
V
I
P
Static characteristics
R
Dynamic characteristics
Q
D
DS
tot
DSon
GD
Measured 3 mm from package.
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state resistance
gate-drain charge
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
PSMN050-80PS
N-channel 80 V 46 mΩ standard level MOSFET
Rev. 2 — 28 November 2011
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switching
Conditions
T
T
T
V
V
see
j
mb
mb
GS
GS
≥ 25 °C; T
= 25 °C; V
= 25 °C; see
Figure
= 10 V; I
= 10 V; I
14; see
j
D
D
≤ 175 °C
GS
= 10 A; T
= 25 A; V
Figure 2
= 10 V; see
Figure 15
j
DS
= 25 °C
= 40 V;
Figure 1
Suitable for standard level gate drive
sources
Motor control
Server power supplies
[1]
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
37
2.3
Max
80
22
56
46
-
Unit
V
A
W
mΩ
nC

Related parts for PSMN050-80PS

PSMN050-80PS Summary of contents

Page 1

... PSMN050-80PS N-channel mΩ standard level MOSFET Rev. 2 — 28 November 2011 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  ...

Page 2

... T pulsed ° ° j(init) D ≤ Ω; unclamped V sup GS All information provided in this document is subject to legal disclaimers. Rev. 2 — 28 November 2011 PSMN050-80PS Graphic symbol G mbb076 3 Min - = 20 kΩ - -20 Figure 1 - Figure 1 - Figure -55 175 ...

Page 3

... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature DC 10 All information provided in this document is subject to legal disclaimers. Rev. 2 — 28 November 2011 PSMN050-80PS 0 50 100 150 T 003aad301 10 μs 100 μ 100 (V) DS © ...

Page 4

... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN050-80PS Product data sheet N-channel mΩ standard level MOSFET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 2 — 28 November 2011 PSMN050-80PS Min Typ Max - 2.2 2.7 003aad055 t p δ ...

Page 5

... Figure MHz °C; see Figure 0.5 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 2 — 28 November 2011 PSMN050-80PS Min Typ Max 4 ...

Page 6

... 003aad046 5 ( (V) DS Fig 6. All information provided in this document is subject to legal disclaimers. Rev. 2 — 28 November 2011 PSMN050-80PS N-channel mΩ standard level MOSFET Min Typ - 0. 100 V ( DSon (mΩ ...

Page 7

... D ( (V) GS Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 28 November 2011 PSMN050-80PS 003aad053 (A) D 003aad048 = 175 ° ° ...

Page 8

... GS Fig 12. Gate-source threshold voltage as a function of 003aad045 90 120 150 180 T (°C) j Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 2 — 28 November 2011 PSMN050-80PS N-channel mΩ standard level MOSFET 5 GS(th) (V) 4 max 3 typ 2 min 1 0 −60 ...

Page 9

... G Fig 16. Source (diode forward) current as a function (pF All information provided in this document is subject to legal disclaimers. Rev. 2 — 28 November 2011 PSMN050-80PS 175 ° 0.5 1 source-drain (diode forward) voltage; typical values 003aad051 ...

Page 10

... 1.3 0.7 16.0 6.6 10.3 2.54 0.4 15.2 5.9 9.7 1.0 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 2 — 28 November 2011 PSMN050-80PS N-channel mΩ standard level MOSFET mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2 ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN050-80PS v.2 20111128 • Modifications: Various changes to content. PSMN050-80PS v.1 20090610 PSMN050-80PS Product data sheet N-channel mΩ standard level MOSFET Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers ...

Page 12

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 28 November 2011 PSMN050-80PS © NXP B.V. 2011. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 28 November 2011 PSMN050-80PS Trademarks © NXP B.V. 2011. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 28 November 2011 Document identifier: PSMN050-80PS ...

Related keywords