PSMN165-200K NXP Semiconductors, PSMN165-200K Datasheet
PSMN165-200K
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PSMN165-200K Summary of contents
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... PSMN165-200K N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 3 December 2009 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... Figure 1 and 3 sp ≤ 10 µs; pulsed ° °C; see Figure °C sp ≤ 10 µs; pulsed ° Rev. 02 — 3 December 2009 PSMN165-200K Graphic symbol mbb076 4 Version SOT96-1 Min Max Unit - 200 ...
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... T (°C) sp Fig 2. Normalized total power dissipation as a function of solder point temperature / D.C. δ Rev. 02 — 3 December 2009 PSMN165-200K 03aa17 50 100 150 T (°C) sp 03ae06 µs p 100 µ 100 (V) DS © NXP B.V. 2009. All rights reserved. ...
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... Transient thermal impedance from junction to solder point as a function of pulse duration PSMN165-200K_2 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Conditions mounted on a metal clad substrate; see Figure 4 −3 −2 − Rev. 02 — 3 December 2009 PSMN165-200K Min Typ Max - - 20 03ae05 t p δ ...
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... 2 ° see Figure 2 ° see Figure 2 /dt = -100 A/µ ° Rev. 02 — 3 December 2009 PSMN165-200K Min Typ Max Unit 200 240 - V 1 µ 0 ...
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... V GS(th) (V) max − (V) GS Fig 8. Gate-source threshold voltage as a function of junction temperature Rev. 02 — 3 December 2009 PSMN165-200K 03ae09 V > DSon = 150 °C 25 ° (V) GS 03aa32 max typ ...
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... C oss , C rss (pF (nC) G Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 3 December 2009 PSMN165-200K 03aa31 0 60 120 ( ° 03ae12 C iss C oss C rss − (V) DS © NXP B.V. 2009. All rights reserved. ...
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... N-channel TrenchMOS SiliconMAX standard level FET 03ae10 ( (A) D Fig 14. Source current as a function of source-drain voltage; typical values Rev. 02 — 3 December 2009 PSMN165-200K 03ae11 = 150 °C 25 ° 0.2 0.4 0.6 0 (V) SD © NXP B.V. 2009. All rights reserved ...
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... 0.49 0.25 5.0 4.0 6.2 1.27 0.36 0.19 4.8 3.8 5.8 0.019 0.0100 0.20 0.16 0.244 0.05 0.041 0.014 0.0075 0.19 0.15 0.228 REFERENCES JEDEC JEITA MS-012 Rev. 02 — 3 December 2009 PSMN165-200K θ detail 1.0 0.7 1.05 0.25 0.25 0.1 0.4 0.6 0.039 0.028 0.028 0.01 0.01 0.004 0.016 ...
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... Legal texts have been adapted to the new company name where appropriate. PSMN165-200K-01 20010116 PSMN165-200K_2 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Data sheet status Change notice Product data sheet - Product specification - Rev. 02 — 3 December 2009 PSMN165-200K Supersedes PSMN165-200K-01 - © NXP B.V. 2009. All rights reserved ...
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... Export might require a prior authorization from national authorities. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS— trademark of NXP B.V. to:salesaddresses@nxp.com Rev. 02 — 3 December 2009 PSMN165-200K © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 3 December 2009 Document identifier: PSMN165-200K_2 ...