PSMN3R5-30YL NXP Semiconductors, PSMN3R5-30YL Datasheet

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PSMN3R5-30YL

Manufacturer Part Number

PSMN3R5-30YL

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

Manufacturer

NXP Semiconductors

Datasheet

1.PSMN3R5-30YL.pdf (14 pages)

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1. Product profile

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

industrial and communications applications.

Table 1.

[1]

Symbol

Static characteristics

Dynamic characteristics

Avalanche ruggedness

tot

DS(AL)S

DSon

G(tot)

PSMN3R5-30YL

N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK

Rev. 4 — 9 March 2011

High efficiency due to low switching

and conduction losses

Class-D amplifiers

DC-to-DC converters

Continuous current is limited by package.

Quick reference data

Parameter

drain-source voltage T

drain current

total power

dissipation

junction temperature

drain-source

on-state resistance

gate-drain charge

total gate charge

non-repetitive

drain-source

avalanche energy

Conditions

see

≥ 25 °C; T

= 25 °C

= 100 A; V

Figure 1

Figure 15

= 25 °C; V

= 25 °C; see

= 10 V; I

= 4.5 V; I

= 12 V; see

= 10 V; T

= 50 Ω; unclamped

sup

≤ 175 °C

j(init)

= 15 A;

= 10 A;

≤ 30 V;

Figure

Figure 2

= 10 V;

= 25 °C;

Suitable for logic level gate drive

sources

Motor control

Server power supplies

14;

[1]

Min

-55

Product data sheet

Typ

2.43 3.5

Max Unit

100

175

°C

mΩ

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PSMN3R5-30YL Summary of contents

Page 1

... PSMN3R5-30YL N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK Rev. 4 — 9 March 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. ...

Page 2

... N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK Simplified outline SOT669 (LFPAK) Description plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 All information provided in this document is subject to legal disclaimers. Rev. 4 — 9 March 2011 PSMN3R5-30YL Graphic symbol mbb076 Version © NXP B.V. 2011. All rights reserved ...

Page 3

... P der (%) 150 200 (° Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 4 — 9 March 2011 PSMN3R5-30YL Min - - = 20 kΩ -20 [1] Figure 1 - [1] Figure °C; see - - -55 ...

Page 4

... N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK Limit DSon Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 4 — 9 March 2011 PSMN3R5-30YL 003aac731 10 μ s 100 μ 100 (V) DS Min Typ Max - 0.6 1.68 003aac717 ...

Page 5

... DS see Figure MHz °C; see Figure 0.5 Ω 4 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 4 — 9 March 2011 PSMN3R5-30YL Min Typ Max Unit 1.3 1.7 2. 2.45 V ...

Page 6

... V (V) GS Fig 6. 003aac711 4000 C (pF) 3000 2000 1000 (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 4 — 9 March 2011 PSMN3R5-30YL Min Typ - 0. ( Output characteristics: drain current as a function of drain-source voltage; typical values ...

Page 7

... I (A) D Fig 10. Drain-source on-state resistance as a function 003aab271 typ max Fig 12. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 4 — 9 March 2011 PSMN3R5-30YL 6 R DSon V (V) = 3.2 (mΩ drain current; typical values ...

Page 8

... Fig 14. Gate charge waveform definitions 003aac715 ( (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 4 — 9 March 2011 PSMN3R5-30YL GS(pl) V GS(th GS1 GS2 ...

Page 9

... Product data sheet N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK 100 150 ° 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 4 — 9 March 2011 PSMN3R5-30YL 003aac708 25 °C 0.8 1.0 V (V) SD © NXP B.V. 2011. All rights reserved ...

Page 10

... A 0 2.5 scale max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 4 — 9 March 2011 PSMN3R5-30YL detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5.8 0.40 0.8 EUROPEAN PROJECTION ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN3R5-30YL v.4 20110309 • Modifications: Various changes to content. PSMN3R5-30YL_3 20091231 PSMN3R5-30YL Product data sheet N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers ...

Page 12

... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 4 — 9 March 2011 PSMN3R5-30YL © NXP B.V. 2011. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 4 — 9 March 2011 PSMN3R5-30YL Trademarks © NXP B.V. 2011. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 9 March 2011 Document identifier: PSMN3R5-30YL ...

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