PSMN6R5-25YLC NXP Semiconductors, PSMN6R5-25YLC Datasheet - Page 7

• Manufacturer Part Number: PSMN6R5-25YLC
• Description: Logic level enhancement mode N-channel MOSFET in LFPAK package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
PSMN6R5-25YLC
Product data sheet
Symbol
Q
Source-drain diode
V
t
Q
t
t
rr
a
b
Fig 6.
SD
oss
r
(A)
I
D
80
60
40
20
0
function of drain-source voltage; typical values
0
Output characteristics; drain current as a
Characteristics
Parameter
output charge
source-drain voltage
reverse recovery time
recovered charge
reverse recovery rise time
reverse recovery fall time
10
0.5
5.0
4.5
N-channel 25 V 6.5 mΩ logic level MOSFET in LFPAK using NextPower technology
…continued
1
V
GS
1.5
(V) = 3.5
All information provided in this document is subject to legal disclaimers.
V
003aag139
DS
(V)
2.8
3.0
2.6
2.4
2.2
Conditions
V
I
see
I
V
V
dI
see
S
S
GS
GS
GS
S
Rev. 2 — 31 October 2011
= 20 A; V
= 20 A; dI
2
/dt = -100 A/µs; V
Figure 17
Figure 18
= 0 V; V
= 0 V; V
= 0 V; I
GS
S
S
DS
DS
/dt = -100 A/µs;
= 20 A;
= 0 V; T
= 12 V; f = 1 MHz
= 12 V
Fig 7.
R
(m Ω )
DS
DSon
25
20
15
10
j
= 12 V;
5
0
= 25 °C;
of gate-source voltage; typical values
Drain-source on-state resistance as a function
0
4
PSMN6R5-25YLC
Min
-
-
-
-
-
-
8
Typ
5.7
0.86
24
15
14
10
12
© NXP B.V. 2011. All rights reserved.
003aag140
V
GS
Max
-
1.1
-
-
-
-
(V)
16
Unit
nC
V
ns
nC
ns
ns
7 of 15