PSMN8R0-30YL NXP Semiconductors, PSMN8R0-30YL Datasheet
PSMN8R0-30YL
Related parts for PSMN8R0-30YL
PSMN8R0-30YL Summary of contents
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... PSMN8R0-30YL N-channel 8.3 mΩ TrenchMOS logic level FET in LFPAK Rev. 2 — 16 May 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. ...
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... ° j(init) D ≤ Ω; unclamped V sup GS All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 May 2011 PSMN8R0-30YL Graphic symbol G mbb076 Version SOT669 Min Max - 30 ≤ 70 nJ; pulsed - kΩ -20 ...
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... T (°C) mb Fig 2. Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 May 2011 PSMN8R0-30YL 120 der 100 Normalized total power dissipation as a function of mounting base temperature =10 μ 100 μ ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN8R0-30YL Product data sheet N-channel 8.3 mΩ TrenchMOS logic level FET in LFPAK Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 May 2011 PSMN8R0-30YL Min Typ Max - 1.35 2.7 003aaf420 tp δ ...
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... MHz °C; see Figure 0.5 Ω 4.7 Ω R G(ext) = 0.5 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 May 2011 PSMN8R0-30YL Min Typ Max 1.3 1.7 2.15 0 2. 100 - 10 ...
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... C (pF) 1500 1000 500 (A) D Fig 8. Input and reverse transfer capacitances as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 May 2011 PSMN8R0-30YL Min Typ - 0 003aaf422 = 150 ° ° ...
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... Fig 10. Drain-source on-state resistance as a function 003aab271 V GS(th) (V) typ max Fig 12. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 May 2011 PSMN8R0-30YL gate-source voltage; typical values 3 max 2 ...
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... V = 15V (nC) G Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 May 2011 PSMN8R0-30YL GS(pl) V GS(th GS1 GS2 ...
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... Product data sheet N-channel 8.3 mΩ TrenchMOS logic level FET in LFPAK (pF All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 May 2011 PSMN8R0-30YL 003aaf425 C iss C oss C rss (V) DS © NXP B.V. 2011. All rights reserved ...
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... A 0 2.5 scale max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 May 2011 PSMN8R0-30YL detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5.8 0.40 0.8 EUROPEAN PROJECTION ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN8R0-30YL v.2 20110516 • Modifications: Various changes to content. PSMN8R0-30YL v.1 20110217 PSMN8R0-30YL Product data sheet N-channel 8.3 mΩ TrenchMOS logic level FET in LFPAK Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 May 2011 PSMN8R0-30YL © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 May 2011 PSMN8R0-30YL Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PSMN8R0-30YL All rights reserved. Date of release: 16 May 2011 Document identifier: PSMN8R0-30YL ...