PSMN9R5-100XS NXP Semiconductors, PSMN9R5-100XS Datasheet - Page 3

• Manufacturer Part Number: PSMN9R5-100XS
• Description: Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN9R5-100XS
Preliminary data sheet
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
(A)
I
D
50
40
30
20
10
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
50
100
150
N-channel 100V 9.6 mΩ standard level MOSFET in TO220F (SOT186A)
All information provided in this document is subject to legal disclaimers.
T
003aag589
mb
( ° C)
Conditions
T
T
V
V
pulsed; t
T
T
pulsed; t
V
V
see
200
j
j
mb
mb
GS
GS
GS
sup
Rev. 2 — 20 October 2011
≥ 25 °C; T
≥ 25 °C; T
= 25 °C; see
= 25 °C
Figure 3
= 10 V; T
= 10 V; T
= 10 V; T
≤ 100 V; unclamped; R
p
p
≤ 10 µs; T
≤ 10 µs; T
j
j
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
Fig 2.
= 25 °C; see
= 100 °C; see
Figure 2
= 25 °C; I
P
(%)
mb
mb
der
120
80
40
0
= 25 °C; see
= 25 °C
function of mounting base temperature
Normalized total power dissipation as a
0
GS
D
GS
= 20 kΩ
= 44.2 A;
Figure 1
= 50 Ω;
Figure 1
50
PSMN9R5-100XS
Figure 4
100
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
mb
20
175
260
Max
100
100
44.2
31.3
177
52.6
175
43.8
177
260
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
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