BLF145 NXP Semiconductors, BLF145 Datasheet

Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range

BLF145

Manufacturer Part Number
BLF145
Description
Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range
Manufacturer
NXP Semiconductors
Datasheet

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Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
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(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
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cooperation and understanding,
NXP Semiconductors
BLF145
HF power MOS transistor
Rev. 04 — 5 January 2007
IMPORTANT NOTICE
Product data sheet

Related parts for BLF145

BLF145 Summary of contents

Page 1

... BLF145 HF power MOS transistor Rev. 04 — 5 January 2007 IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below ...

Page 2

... It must never be thrown out with the general or domestic waste. f (MHz) V ( Rev January 2007 Product specification MBB072 3 MSB057 CAUTION WARNING (1) P (W) G (dB) (%) (PEP (PEP) typ. 20 typ. 40 BLF145 d (dB typ ...

Page 3

... V DS (V) . (1) Short-time operation during mismatch. DSon (2) Continuous operation. Rev January 2007 Product specification MIN. MAX 150 200 VALUE 2.6 0.3 (1) ( 120 Fig.3 Power derating curves. BLF145 UNIT UNIT K/W K/W MGP035 160 ...

Page 4

... GROUP MAX. 2.1 O 2.2 P 2.3 Q 2.4 R 2.5 S 2.6 T 2.7 U 2.8 V 2.9 W 3.0 X 3.1 Y 3.2 Z 3.3 Rev January 2007 Product specification MIN. TYP. MAX. UNIT = 1 0 125 75 7 LIMITS (V) MIN. 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 BLF145 4.5 V 100 MAX. 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4 ...

Page 5

... Product specification 125 Drain current as a function of gate-source voltage; typical values MHz. Input and output capacitance as functions of drain-source voltage; typical values. BLF145 MGP037 (V) MGP039 ( ...

Page 6

... NXP Semiconductors HF power MOS transistor 20 handbook, halfpage C rs (pF MHz. GS Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. MRA900 (V) Rev January 2007 Product specification BLF145 ...

Page 7

... Rev January 2007 Product specification (1) (dB) (dB) (dB typ. 27 typ. 43 typ (W) PEP = 1 0.3 K/ MHz function of load power; typical values. BLF145 18.4 j5.2 MGP041 ...

Page 8

... MGP042 VALUE DIMENSIONS CATALOGUE NO. 2222 809 07015 2222 852 47104 100 nF 2222 852 47104 2222 030 38228 length 8 mm; int. dia length length 14 mm; int. dia length 10 mm; int. dia 4312 020 36640 = 4.5), thickness 1.6 mm. r BLF145 . ...

Page 9

... Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope power the values should be decreased by 6 dB. Ruggedness in class-AB operation The BLF145 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases at P single tone under the following conditions ...

Page 10

... DIMENSIONS CATALOGUE NO. 2222 809 07011 2222 852 47104 2222 809 07015 2222 852 47104 2222 030 38228 length 10 mm; int. dia length length 13 mm; int. dia length 10 mm; int. dia 4312 020 36640 = 4.5), thickness 1.6 mm. r BLF145 ...

Page 11

... Rev January 2007 Product specification ( 0. 0.3 K/ MHz function of load power, typical values 0. 0.3 K/ mb-h f (MHz) 1.5 32.9 3.0 32.4 6.0 30.7 10 27.4 15 32.9 20 18.5 25 15.1 30 12.5 BLF145 MGP047 j2.2 j4.3 j8.1 j11.9 j14.6 j15.4 j15.3 j14 ...

Page 12

... NXP Semiconductors HF power MOS transistor BLF145 scattering parameters 250 mA; note (MHz 0.90 70.90 10 0.81 108.90 20 0.76 140.20 30 0.75 151.90 40 0.75 157.90 50 0.75 161.40 60 0.76 163.70 70 0.77 165.30 80 0.77 166.60 90 0.78 167.50 100 0.79 168.40 125 0.81 170.40 150 0.83 172.00 175 0.85 173.60 200 0.87 175.20 250 0.89 178.40 300 0.91 178.50 350 0 ...

Page 13

... REFERENCES JEDEC EIAJ Rev January 2007 Product specification 6.48 9.78 24.87 0.25 0.51 6.22 9.39 24.64 45 0.980 0.255 0.385 0.010 0.020 0.970 0.245 0.370 EUROPEAN PROJECTION BLF145 SOT123A ISSUE DATE 99-03- ...

Page 14

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev January 2007 BLF145 HF power MOS transistor ...

Page 15

... NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Rev January 2007 BLF145 HF power MOS transistor Supersedes BLF145_3 BLF145_CNV_2 - All rights reserved. Date of release: 5 January 2007 Document identifier: BLF145_N_4 ...

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