BLF178XRS NXP Semiconductors, BLF178XRS Datasheet - Page 5
BLF178XRS
Manufacturer Part Number
BLF178XRS
Description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band
Manufacturer
NXP Semiconductors
Datasheet
1.BLF178XR.pdf
(11 pages)
NXP Semiconductors
BLF178XR_BLF178XRS
Objective data sheet
6.3 Ruggedness in class-AB operation
The BLF178XR and BLF178XRS are capable of withstanding a load mismatch
corresponding to VSWR > 65 : 1 through all phases under the following conditions:
V
Fig 2.
DS
= 50 V; I
V
Output capacitance as a function of drain-source voltage; typical values per
section
GS
Dq
= 0 V; f = 1 MHz.
All information provided in this document is subject to legal disclaimers.
= 40 mA; P
&
S)
RVV
Rev. 1 — 30 January 2012
L
= 1400 W pulsed; f = 108 MHz.
BLF178XR; BLF178XRS
9
'6
9
Power LDMOS transistor
© NXP B.V. 2012. All rights reserved.
5 of 11
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