BLF2425M7L140 NXP Semiconductors, BLF2425M7L140 Datasheet
BLF2425M7L140
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BLF2425M7L140 Summary of contents
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... General description 140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M7L140 and BLF2425M7LS140 are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions Table 1. ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin BLF2425M7L140 (SOT502A BLF2425M7LS140 (SOT502B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF2425M7L140 BLF2425M7LS140 - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg Thermal characteristics Table 5 ...
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... Test information 7.1 Ruggedness in class-AB operation The BLF2425M7L140 and BLF2425M7LS140 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLF2425M7L140_2425M7LS140 Objective data sheet DC characteristics C unless otherwise specified. drain-source breakdown voltage gate-source threshold voltage ...
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... NXP Semiconductors 7.2 Impedance information Table 8. Measured load-pull data. Typical values unless otherwise specified and (MHz) <tbd> Fig 1. BLF2425M7L140_2425M7LS140 Objective data sheet Typical impedance defined in Figure () <tbd> gate Definition of transistor impedance All information provided in this document is subject to legal disclaimers. ...
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... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502A Fig 2. Package outline SOT502A BLF2425M7L140_2425M7LS140 Objective data sheet scale 19.96 9.50 9.53 1.14 19.94 5.33 19 ...
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... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.186 0.505 0.788 0.006 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502B Fig 3. Package outline SOT502B BLF2425M7L140_2425M7LS140 Objective data sheet scale 19.96 9.50 9.53 1.14 19.94 5 ...
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... Table 9. Acronym CW LDMOS LDMOST RF VSWR 11. Revision history Table 10. Revision history Document ID BLF2425M7L140_2425M7LS140 v.1 BLF2425M7L140_2425M7LS140 Objective data sheet Abbreviations Description Continuous Wave Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal Oxide Semiconductor Transistor Radio Frequency Voltage Standing Wave Ratio Release date Data sheet status ...
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... This document supersedes and replaces all information supplied prior to the publication hereof. BLF2425M7L140_2425M7LS140 Objective data sheet [3] Definition This document contains data from the objective specification for product development. ...
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... Contact information For more information, please visit: For sales office addresses, please send an email to: BLF2425M7L140_2425M7LS140 Objective data sheet NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF2425M7L140_2425M7LS140 All rights reserved. Date of release: 30 January 2012 ...