BLF245B NXP Semiconductors, BLF245B Datasheet

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range

BLF245B

Manufacturer Part Number
BLF245B
Description
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range
Manufacturer
NXP Semiconductors
Datasheet

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Product specification
Supersedes data of 2000 Oct 17
DATA SHEET
BLF245B
VHF push-pull power MOS
transistor
DISCRETE SEMICONDUCTORS
M3D096
2003 Aug 04

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BLF245B Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET BLF245B VHF push-pull power MOS transistor Product specification Supersedes data of 2000 Oct 17 M3D096 2003 Aug 04 ...

Page 2

... After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste (MHz) (V) 175 28 2 Product specification BLF245B MSB018 MBB157 CAUTION WARNING P ...

Page 3

... V DS (V) . DSon (1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded. 3 Product specification MIN. 65 VALUE 2.3 0.3 ( 120 Fig.3 Power derating curves. BLF245B MAX. UNIT 4 +150 C 200 C UNIT K/W K/W MRA929 160 ...

Page 4

... MHz MHz GS DS LIMITS (V) GROUP MAX. 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 4 Product specification MIN. TYP. MAX 600 850 = 4.5 LIMITS (V) MIN. O 3.3 P 3.4 Q 3.5 R 3.6 S 3.7 T 3.8 U 3.9 V 4.0 W 4.1 X 4.2 Y 4.3 Z 4.4 BLF245B UNIT 4 1 MAX. 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 ...

Page 5

... V. Drain current as a function of gate-source voltage; typical values per section. 160 C 120 MHz. Input and output capacitance as functions of drain-source voltage; typical values per section. BLF245B MGP181 (V) MGP183 (V) ...

Page 6

... K/W; unless otherwise specified mb-h RF performance in a push-pull, common source, class-B test circuit. MODE OF OPERATION CW, class-B Ruggedness in class-B operation The BLF245B is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases, under the following conditions 175 MHz at rated output power. DS 2003 Aug 04 MGP184 ...

Page 7

... Aug 04 MGP185 handbook, halfpage ( (W) 25 mA; Class-B operation Fig.10 Load power as a function of input power; 7 Product specification 0.5 1 8.8 j12 175 MHz. typical values. BLF245B MGP186 2 (W) ...

Page 8

Acrobat reader. white to force landscape pages to be ... input 175 ...

Page 9

... BLF245B CATALOGUE NO. 2222 809 08002 2222 809 08003 2222 852 47104 2222 852 47103 4312 020 36642 ...

Page 10

... Fig.12 Component layout for 175 MHz test circuit. 10 rivet copper strap rivet copper strap rivet MBA377 V D C12 C11 L20 C13 R7 L14 C25 C23 C21 L18 L19 C22 C24 C26 L15 R8 L21 + L22 C18 C19 C20 MBA378 V D Product specification BLF245B 110 mm ...

Page 11

... mA (total device). L (series components); typical values per section (dB 100 200 300 = mA (total device). L typical values per section. BLF245B MGP189 400 f (MHz) MGP190 400 f (MHz) ...

Page 12

... REFERENCES JEDEC EIAJ 4.96 3.48 4.34 24.90 5.97 18.42 4.19 3.23 4.04 24.64 5.72 0.137 0.171 0.195 0.980 0.235 0.725 0.165 0.127 0.159 0.970 0.225 EUROPEAN PROJECTION Product specification BLF245B SOT279A 0.25 0.51 0.25 0.010 0.020 0.010 ISSUE DATE 99-03-29 ...

Page 13

... Product specification BLF245B DEFINITION These products are not Philips Semiconductors ...

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Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...

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