BLF6G22LS-40P NXP Semiconductors, BLF6G22LS-40P Datasheet
BLF6G22LS-40P
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BLF6G22LS-40P Summary of contents
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... BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor Rev. 1 — 22 September 2011 1. Product profile 1.1 General description LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA 1-carrier W-CDMA ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin BLF6G22L-40P (SOT1121A BLF6G22LS-40P (SOT1121B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G22L-40P BLF6G22LS-40P 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol ...
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... ACPR 10M [1] In production, all testing are only performed at 2110 MHz to 2170 MHz frequency band. 7.1 Ruggedness in class-AB operation The BLF6G22L-40P and BLF6G22LS-40P are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions The BLF6G22L-40P and BLF6G22LS-40P are capable of withstanding a load mismatch ...
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... NXP Semiconductors 7 2110 MHz ( 2140 MHz ( 2170 MHz Fig 1. BLF6G22L-40P_6G22LS-40P Product data sheet BLF6G22L-40P; BLF6G22LS-40P (2) (3) (1) (dB η 410 mA Power gain and drain efficiency as function of load power; typical values All information provided in this document is subject to legal disclaimers. ...
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... 410 mA ( 2110 MHz ( 2140 MHz ( 2170 MHz Fig 2. Single carrier IS-95 power gain and drain efficiency as function of output power; typical values BLF6G22L-40P_6G22LS-40P Product data sheet BLF6G22L-40P; BLF6G22LS-40P aaa-000329 50 η D (%) ACPR (dBc ...
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... 410 mA ( 2112.5 MHz ( 2140 MHz ( 2167.5 MHz Fig 6. 1-carrier W-CDMA power gain and drain efficiency as function of output power; typical values BLF6G22L-40P_6G22LS-40P Product data sheet BLF6G22L-40P; BLF6G22LS-40P aaa-000331 η ACPR D (%) (dBc η D ...
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... 410 mA ( 2115 MHz ( 2140 MHz ( 2165 MHz Fig 9. 2-carrier W-CDMA peak-to-average power ratio as function of output power; typical values BLF6G22L-40P_6G22LS-40P Product data sheet BLF6G22L-40P; BLF6G22LS-40P aaa-000334 70 η D (%) ACPR 60 (dBc η ...
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... C12 C5, C8 C6, C14, C15 C13 R1, R2 [1] American Technical Ceramics type 800B or capacitor of same quality. [2] American Technical Ceramics type 100A or capacitor of same quality. BLF6G22L-40P_6G22LS-40P Product data sheet BLF6G22L-40P; BLF6G22LS-40P 50 Printed-Circuit Board (PCB): Rogers RO4350; thickness copper plating = 35 m. ...
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... Fig 11. 1.8 GHz Demo board layout Table 9. See Figure 11 Component C1, C2, C5, C8 C3, C4, C11, C14 multilayer ceramic chip capacitor C6 C7 C9, C12 C10, C13 C15, C16 C17 C18 C19, C20 BLF6G22L-40P_6G22LS-40P Product data sheet BLF6G22L-40P; BLF6G22LS-40P ...
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... Figure 11 Component L1 R2, R5 R3, R6 R4, R11 R9 R10 R12 VR1 U1 BLF6G22L-40P_6G22LS-40P Product data sheet BLF6G22L-40P; BLF6G22LS-40P List of components for component layout. Description ferrite bead chip resistor chip resistor chip resistor chip resistor chip resistor chip resistor chip resistor potentiometer voltage regulator All information provided in this document is subject to legal disclaimers. Rev. 1 — ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1121A Fig 12. Package outline SOT1121A BLF6G22L-40P_6G22LS-40P Product data sheet BLF6G22L-40P; BLF6G22LS-40P ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1121B Fig 13. Package outline SOT1121B BLF6G22L-40P_6G22LS-40P Product data sheet BLF6G22L-40P; BLF6G22LS-40P ...
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... RF VSWR W-CDMA 11. Revision history Table 11. Revision history Document ID BLF6G22L-40P_6G22LS-40P v.1 BLF6G22L-40P_6G22LS-40P Product data sheet BLF6G22L-40P; BLF6G22LS-40P Abbreviations Description 3rd Generation Partnership Project Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel ElectroStatic Discharge Interim Standard 95 Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal Oxide Semiconductor Transistor ...
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... BLF6G22L-40P_6G22LS-40P Product data sheet BLF6G22L-40P; BLF6G22LS-40P [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... For sales office addresses, please send an email to: BLF6G22L-40P_6G22LS-40P Product data sheet BLF6G22L-40P; BLF6G22LS-40P NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Trademarks Contact information Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 BLF6G22L-40P; BLF6G22LS-40P Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved ...