BLF6G22LS-40P NXP Semiconductors, BLF6G22LS-40P Datasheet - Page 3

• Manufacturer Part Number: BLF6G22LS-40P
• Description: LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
BLF6G22L-40P_6G22LS-40P
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 64 DPCH; f
RF performance at V
[1]
The BLF6G22L-40P and BLF6G22LS-40P are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
The BLF6G22L-40P and BLF6G22LS-40P are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Symbol
R
Symbol Parameter
I
I
g
R
Symbol
G
RL
ACPR
V
V
I

ACPR
DSS
DSX
GSS
j
DS
DS
fs
D
(BR)DSS
GS(th)
th(j-c)
DS(on)
p
= 25
in
In production, all testing are only performed at 2110 MHz to 2170 MHz frequency band.
= 28 V; I
= 28 V; I
5M
10M

C; unless otherwise specified.
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Parameter
thermal resistance from junction to case
Thermal characteristics
Characteristics (per section)
Application information (2 sections combined)
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio (5 MHz)
adjacent channel power ratio (10 MHz) P
Dq
Dq
= 410 mA; P
All information provided in this document is subject to legal disclaimers.
= 410 mA; P
1
DS
BLF6G22L-40P; BLF6G22LS-40P
= 2112.5 MHz; f
Rev. 1 — 22 September 2011
= 28 V; I
L
L
Dq
= 40 W (CW); f = 2110 MHz.
= 40 W (CW pulse, 10 %); f = 1842 MHz.
= 410 mA; T
2
= 2117.5 MHz; f
Conditions
V
V
V
V
V
V
V
V
I
D
GS
DS
GS
GS
DS
GS
DS
GS
case
= 1.4 A
= 0 V; I
= 10 V; I
= 0 V; V
= V
= 10 V
= 11 V; V
= 10 V; I
= V
= 25
Conditions
P
P
P
P
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
GS(th)
GS(th)
3
Conditions
T

= 2162.5 MHz; f
D
case
C; in a class-AB production test circuit.
DS
D
D
= 13.5 W
= 13.5 W
= 13.5 W
= 13.5 W
= 13.5 W
= 0.4 mA
+ 3.75 V;
DS
+ 3.75 V;
= 40 mA
= 2.0 A
= 28 V
= 80 C; P
= 0 V
Power LDMOS transistor
[1]
[1]
[1]
[1]
[1]
L
4
= 40 W
Min Typ Max Unit
17.8 19
-
26.5 30
-
-
Min Typ
65
1.4
-
6
-
1.8
0.14 0.37
= 2167.5 MHz;
© NXP B.V. 2011. All rights reserved.
15
30
39
-
1.9
-
7
-
2.9
-
9
-
27
36
Typ
0.7
Max Unit
-
2.4
2
-
200
-
0.57 
dB
dB
%
dBc
dBc
3 of 16
Unit
K/W
V
V
A
A
nA
S