BLF6G22LS-40P NXP Semiconductors, BLF6G22LS-40P Datasheet - Page 7

• Manufacturer Part Number: BLF6G22LS-40P
• Description: LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G22L-40P_6G22LS-40P
Product data sheet
Fig 7.
Fig 9.
(dB)
G
(1) f = 2115 MHz
(2) f = 2140 MHz
(3) f = 2165 MHz
(1) f = 2115 MHz
(2) f = 2140 MHz
(3) f = 2165 MHz
p
35
30
25
20
15
10
5
0
28
V
efficiency as function of output power; typical
values
V
2-carrier W-CDMA peak-to-average power ratio as function of output power; typical values
2-carrier W-CDMA power gain and drain
DS
DS
= 28 V; I
= 28 V; I
32
7.5 2-carrier W-CDMA
(1)
G
p
(2)
Dq
Dq
= 410 mA.
= 410 mA.
(3)
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
36
(1)
(2)
(3)
40
η
PAR
(dB)
D
10
8
6
4
2
0
28
44
All information provided in this document is subject to legal disclaimers.
aaa-000334
P
L
(dBm)
BLF6G22L-40P; BLF6G22LS-40P
(1)
Rev. 1 — 22 September 2011
32
48
(2)
70
60
50
40
30
20
10
0
(%)
(3)
η
D
36
Fig 8.
40
ACPR
(dBc)
(1) f = 2115 MHz
(2) f = 2140 MHz
(3) f = 2165 MHz
-10
-30
-50
-70
5M
28
V
2-carrier W-CDMA adjacent channel power
ratio as a function of output power;
typical values
44
DS
aaa-000336
P
L
= 28 V; I
(dBm)
(1)
32
48
(2)
Dq
(3)
(1)
= 410 mA.
36
(2)
ACPR
(3)
5M
Power LDMOS transistor
40
ACPR
© NXP B.V. 2011. All rights reserved.
44
aaa-000335
P
L
(dBm)
10M
48
ACPR
-10
-30
-50
-70
(dBc)
7 of 16
10M