BLF7G10L-250 NXP Semiconductors, BLF7G10L-250 Datasheet - Page 10

• Manufacturer Part Number: BLF7G10L-250
• Description: 250 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
9. Abbreviations
10. Revision history
Table 11.
BLF7G10L-250_7G10LS-250
Product data sheet
Document ID
BLF7G10L-250_7G10LS-250 v.3 20120216
Modifications:
BLF7G10L-250_7G10LS-250 v.2 20111114
BLF7G10L-250_7G10LS-250 v.1 20110225
Revision history
Table 10.
Acronym
3GPP
CCDF
CW
DPCH
ESD
LDMOS
LDMOST
PAR
RF
VSWR
W-CDMA
Release date Data sheet status
•
•
•
Abbreviations
The status of this data sheet has been changed to Product data sheet
Table 6 on page
Table 8 on page
All information provided in this document is subject to legal disclaimers.
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
ElectroStatic Discharge
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Peak-to-Average power Ratio
Radio Frequency
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
BLF7G10L-250; BLF7G10LS-250
Rev. 3 — 16 February 2012
Product data sheet
Preliminary data sheet -
Objective data sheet
3: I
4: values rounded off to one decimal place
D
value changed to 3.3 mA at conditions of V
Change
notice
-
-
Supersedes
BLF7G10L-250_7G10LS-250 v.2
BLF7G10L-250_7G10LS-250 v.1
-
Power LDMOS transistor
© NXP B.V. 2012. All rights reserved.
(BR)DSS
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