BLF7G24L-160P NXP Semiconductors, BLF7G24L-160P Datasheet
BLF7G24L-160P
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BLF7G24L-160P Summary of contents
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... BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 2 — 1 March 2012 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical RF performance at T Test signal IS-95 [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9 ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin BLF7G24L-160P (SOT539A BLF7G24LS-160P (SOT539B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF7G24L-160P BLF7G24LS-160P 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg ...
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... D ACPR 885k 7.1 Ruggedness in class-AB operation The BLF7G24L-160P and BLF7G24LS-160P are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLF7G24L-160P_7G24LS-160P Objective data sheet BLF7G24L-160P; BLF7G24LS-160P Thermal characteristics thermal resistance from junction to case Characteristics C per section, unless otherwise specified ...
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... MHz D (5) 2350 MHz D (6) 2400 MHz D Fig 2. Power gain and drain efficiency as function of output power; typical values BLF7G24L-160P_7G24LS-160P Objective data sheet BLF7G24L-160P; BLF7G24LS-160P Typical impedance = () 2.5 j5.9 4.6 j7.2 gate Definition of transistor impedance DDD ...
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... 2400 MHz p (4) 2300 MHz D (5) 2350 MHz D (6) 2400 MHz D Fig 5. Power gain and drain efficiency as function of output power; typical values BLF7G24L-160P_7G24LS-160P Objective data sheet BLF7G24L-160P; BLF7G24LS-160P = 1200 mA; ...
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... GS1 ( 2300 MHz ( 2350 MHz ( 2400 MHz Fig 7. Input return loss as a function of output power; typical values BLF7G24L-160P_7G24LS-160P Objective data sheet BLF7G24L-160P; BLF7G24LS-160P DDD $&35 G G 1200 mA. Dq1 Fig 8. All information provided in this document is subject to legal disclaimers. ...
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... MHz D Fig 9. Power gain and drain efficiency as function of output power; typical values ( 2300 MHz ( 2350 MHz ( 2400 MHz Fig 11. Input return loss as a function of output power; typical values BLF7G24L-160P_7G24LS-160P Objective data sheet BLF7G24L-160P; BLF7G24LS-160P DDD ' ...
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... C2, C3, C7, C8 C4, C5, C9, C10 C11, C12 C13 R1, R2 [1] American technical ceramics type 100B or capacitor of same quality. [2] American technical ceramics type 100A or capacitor of same quality. [3] TDK or capacitor of same quality. BLF7G24L-160P_7G24LS-160P Objective data sheet BLF7G24L-160P; BLF7G24LS-160P INPUT C1 REV01 BLF7G24LS-160P See Table 9 for a list of components ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION IEC SOT539A Fig 13. Package outline SOT539A BLF7G24L-160P_7G24LS-160P Objective data sheet BLF7G24L-160P; BLF7G24LS-160P ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version IEC SOT539B Fig 14. Package outline SOT539B BLF7G24L-160P_7G24LS-160P Objective data sheet BLF7G24L-160P; BLF7G24LS-160P scale ...
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... Revision history Table 11. Revision history Document ID BLF7G24L-160P_7G24LS-160P v.2 Modifications: BLF7G24L-160P_7G24LS-160P v.1 BLF7G24L-160P_7G24LS-160P Objective data sheet BLF7G24L-160P; BLF7G24LS-160P Abbreviations Description Complementary Cumulative Distribution Function Interim Standard 95 ElectroStatic Discharge Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal Oxide Semiconductor Transistor Peak-to-Average power Ratio Radio Frequency ...
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... This document supersedes and replaces all information supplied prior to the publication hereof. BLF7G24L-160P_7G24LS-160P Objective data sheet BLF7G24L-160P; BLF7G24LS-160P [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... For sales office addresses, please send an email to: BLF7G24L-160P_7G24LS-160P Objective data sheet BLF7G24L-160P; BLF7G24LS-160P NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved. Date of release: 1 March 2012 Document identifier: BLF7G24L-160P_7G24LS-160P ...