BLF881S NXP Semiconductors, BLF881S Datasheet - Page 5

• Manufacturer Part Number: BLF881S
• Description: A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Application information
BLF881_BLF881S
Product data sheet
Fig 3.
(dB)
G
p
23
22
21
20
19
18
17
16
0
V
narrowband 860 MHz test circuit.
function of average load power; typical values
2-Tone power gain and drain efficiency as
DS
= 50 V; I
7.1.1 CW
7.1.2 2-Tone
G
η
7.1 Narrowband RF figures
D
p
40
Dq
= 0.5 A; measured in a common-source
Fig 2.
80
V
CW power gain and drain efficiency as function of load power; typical values
DS
= 50 V; I
120
P
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0001aal076
L(AV)
Dq
(W)
(dB)
G
Rev. 3 — 7 December 2010
= 0.5 A; measured in a common-source narrowband 860 MHz test circuit.
160
p
23
22
21
20
19
18
17
16
70
60
50
40
30
20
10
0
(%)
0
η
D
G
η
D
p
40
Fig 4.
IMD3
(dBc)
−20
−40
−60
80
0
0
V
narrowband 860 MHz test circuit.
2-Tone third order intermodulation distortion
as a function of average load power; typical
values
DS
= 50 V; I
120
BLF881; BLF881S
40
Dq
160
= 0.5 A; measured in a common-source
001aal075
P
UHF power LDMOS transistor
L
(W)
80
200
70
60
50
40
30
20
10
0
(%)
η
D
120
© NXP B.V. 2010. All rights reserved.
P
L(AV)
001aal077
(W)
160
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