BLF8G10LS-160 NXP Semiconductors, BLF8G10LS-160 Datasheet - Page 2

• Manufacturer Part Number: BLF8G10LS-160
• Description: 160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF8G10L-160_8G10LS-160
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
BLF8G10L-160 (SOT502A)
1
2
3
BLF8G10LS-160 (SOT502B)
1
2
3
Type number
Symbol
V
T
Symbol
R
BLF8G10L-160
BLF8G10LS-160
V
T
stg
j
DS
GS
th(j-c)
Connected to flange
Parameter
thermal resistance from junction to case
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
drain
gate
source
drain
gate
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
-
BLF8G10L-160; BLF8G10LS-160
Rev. 3 — 16 February 2012
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
Conditions
[1]
[1]
Simplified outline
Conditions
T
V
case
DS
= 30 V; I
= 80 C; P
1
2
1
2
Dq
3
Power LDMOS transistor
= 1100 mA
L
3
= 35 W;
Graphic symbol
-
Min
-
0.5
65
© NXP B.V. 2012. All rights reserved.
2
2
Max
65
+13
+150
200
sym112
sym112
Typ
0.50 K/W
Version
SOT502A
SOT502B
1
3
1
3
2 of 13
Unit
Unit
V
V
C
C