BLL6H0514L-130 NXP Semiconductors, BLL6H0514L-130 Datasheet - Page 5

• Manufacturer Part Number: BLL6H0514L-130
• Description: 130 W LDMOS transistor intended for pulsed applications in the 0
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLL6H0514L-130_0514LS-130
Product data sheet
Fig 2.
Fig 4.
(dB)
(dB)
G
G
(1) f = 1.2 GHz
(2) f = 1.3 GHz
(3) f = 1.4 GHz
p
p
20
16
12
20
16
12
8
4
0
8
4
0
1.15
V
Power gain and drain efficiency as function of
frequency; typical values
0
V
Power gain as a function of load power; typical
values
DS
DS
= 50 V; I
= 50 V; I
7.2 Performance curves
40
Dq
Dq
1.25
= 50 mA; t
= 50 mA; t
80
G
η
p
p
D
p
= 300 s;  = 10 %.
= 300 s;  = 10 %.
1.35
(1)
(2)
(3)
120
f (GHz)
All information provided in this document is subject to legal disclaimers.
001aam262
001aam264
P
L
(W)
Rev. 2 — 13 September 2010
1.45
160
60
50
40
30
20
10
(%)
η
D
Fig 3.
Fig 5.
RL
(dB)
(%)
η
(1) f = 1.2 GHz
(2) f = 1.3 GHz
(3) f = 1.4 GHz
D
in
20
16
12
60
50
40
30
20
10
8
4
0
1.15
0
V
Input return loss as a function of frequency;
typical values
V
Drain efficiency as function of load power;
typical values
DS
DS
= 50 V; I
= 50 V; I
BLL6H0514L(S)-130
40
Dq
Dq
1.25
= 50 mA; t
= 50 mA; t
80
(1)
(2)
(3)
LDMOS driver transistor
p
p
= 300 s;  = 10 %.
= 300 s;  = 10 %.
1.35
120
© NXP B.V. 2010. All rights reserved.
f (GHz)
001aam263
001aam265
P
L
(W)
1.45
160
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