BLS6G2735LS-30 NXP Semiconductors, BLS6G2735LS-30 Datasheet - Page 11

• Manufacturer Part Number: BLS6G2735LS-30
• Description: 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Fig 10. Package outline SOT1135B
BLS6G2735L-30_6G2735LS-30
Objective data sheet
Earless flanged ceramic package; 2 leads
Dimensions
inches
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
mm
Unit
SOT1135B
Outline
version
(1)
max
nom
max
nom
min
min
0.183
0.148
4.65
3.76
A
0.207
0.197
5.26
5.00
b
0.007
0.004
0.18
0.10
IEC
H
c
U
A
9.65
9.40
0.38
0.37
2
D
9.65
9.40
0.38
0.37
D
1
JEDEC
BLS6G2735L-30; BLS6G2735LS-30
9.65
9.40
0.38
0.37
All information provided in this document is subject to legal disclaimers.
E
U
D
D
3
1
2
b
1
9.65
9.40
0.38
0.37
1
E
References
1
Rev. 1 — 11 October 2011
0
1.14
0.89
0.045
0.035
F
19.94
18.92
w
0.785
0.745
JEITA
2
H
D
scale
F
5
D
0.067
0.057
1.70
1.45
Q
9.91
9.65
0.39
0.38
U
1
10 mm
9.91
9.65
0.39
0.38
U
2
E
1
0.51
0.02
w
2
Q
c
European
projection
S-band LDMOS transistor
E
© NXP B.V. 2011. All rights reserved.
Issue date
09-10-12
09-12-14
sot1135b_po
SOT1135B
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