BLS7G2933S-150 NXP Semiconductors, BLS7G2933S-150 Datasheet
BLS7G2933S-150
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BLS7G2933S-150 Summary of contents
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... BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 — 23 February 2011 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical RF performance at T production test circuit. Mode of operation pulsed RF 1.2 Features and benefits Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin [1] Connected to flange. 3. Ordering information Table 3. Type number BLS7G2933S-150 - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg Thermal characteristics Table 5. Symbol Z th(j-mb) BLS7G2933S-150 Product data sheet ...
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... All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 February 2011 BLS7G2933S-150 LDMOS S-band radar power transistor Conditions Min 0 ...
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... NXP Semiconductors Table 8. f GHz 2.9 3.0 3.1 3.2 3.3 Fig 1. 7.1 Ruggedness in class-AB operation The BLS7G2933S-150 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 100 mA BLS7G2933S-150 Product data sheet Typical impedance Z S Ω 2.2 − j7.4 2.9 − j6.5 4.2 − j5.9 6.0 − j6.5 6.5 − j8.9 ...
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... Product data sheet 001aan028 (dB) (5) (4) (3) ( 300 μs; δ Fig 3. All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 February 2011 BLS7G2933S-150 LDMOS S-band radar power transistor (1) 13 (2) (3) (4) ( 120 = 300 μ ...
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... 150 100 mA Input return loss as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 February 2011 BLS7G2933S-150 LDMOS S-band radar power transistor (dB) η ...
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... SMD resistor All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 February 2011 BLS7G2933S-150 LDMOS S-band radar power transistor Value Remarks 10 μ ...
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... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 February 2011 BLS7G2933S-150 LDMOS S-band radar power transistor 1.70 17.75 9.53 0.25 1.45 17.50 9.27 0.067 0.699 0.375 ...
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... Abbreviations Table 10. Acronym LDMOS RF S-band SMD VSWR 12. Revision history Table 11. Revision history Document ID Release date BLS7G2933S-150 v.2 20110223 • Modifications: • BLS7G2933S-150 v.1 20101112 BLS7G2933S-150 Product data sheet Abbreviations Description Laterally Diffused Metal-Oxide Semiconductor Radio Frequency Short wave Band Surface Mounted Device ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 February 2011 BLS7G2933S-150 LDMOS S-band radar power transistor © NXP B.V. 2011. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 February 2011 BLS7G2933S-150 LDMOS S-band radar power transistor © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLS7G2933S-150 All rights reserved. Date of release: 23 February 2011 ...