BF1118R NXP Semiconductors, BF1118R Datasheet

These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode

BF1118R

Manufacturer Part Number
BF1118R
Description
These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode
Manufacturer
NXP Semiconductors
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
BF1118R
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BF1118R+215
Manufacturer:
NXP
Quantity:
474
1. Product profile
Table 1.
[1]
CAUTION
Symbol
L
ISL
R
V
ins(on)
GS(p)
DSon
off
I
F
= diode forward current.
Quick reference data
Parameter
on-state insertion loss
off-state isolation
drain-source on-state resistance
gate-source pinch-off voltage
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
These switches are a combination of a depletion type Field-Effect Transistor (FET) and a
band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are
encapsulated in the SOT143B, SOT143R, SOT343N and SOT343R respectively. The low
loss and high isolation capabilities of these devices provide excellent RF switching
functions. The gate of the MOSFET can be isolated from ground with the diode, resulting
in low losses. Integrated diodes between gate and source and between gate and drain
protect against excessive input voltage surges.
BF1118; BF1118R; BF1118W;
BF1118WR
Silicon RF switches
Rev. 2 — 11 January 2012
Specially designed for low loss RF switching up to 1 GHz
Various RF switching applications such as:
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Passive loop through for VCR tuner
Transceiver switching
Conditions
R
V
R
V
V
V
SK
SK
KS
DS
S
S
= R
= R
= V
= V
= 0 V; I
= 1 V; I
L
L
DK
DK
= 50 ; f  1 GHz;
= 50 ; f  1 GHz;
= 0 V; I
= 3.3 V; I
D
D
= 1 mA
= 20 A
F
= 0 mA
F
= 1 mA
[1]
Min
-
30
-
-
Product data sheet
Typ
-
-
15
2
Max
2.5
-
23.3
2.44
dB
V
Unit
dB

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BF1118R Summary of contents

Page 1

... General description These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are encapsulated in the SOT143B, SOT143R, SOT343N and SOT343R respectively. The low loss and high isolation capabilities of these devices provide excellent RF switching functions ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Description BF1118 (SOT143B) 1 FET gate; diode anode 2 diode cathode 3 source 4 drain BF1118R (SOT143R) 1 FET gate; diode anode 2 diode cathode 3 source 4 drain BF1118W (SOT343N) 1 FET gate; diode anode 2 diode cathode 3 source 4 drain BF1118WR (SOT343R) 1 FET gate; diode anode ...

Page 3

... NXP Semiconductors 4. Marking Table 4. Type number BF1118 BF1118R BF1118W BF1118WR 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol FET Diode FET and diode T stg Thermal characteristics Table 6. ...

Page 4

... NXP Semiconductors 7. Static characteristics Table 7. Static characteristics  unless otherwise specified. j Symbol Parameter FET V gate-source breakdown voltage (BR)GSS V gate-source pinch-off voltage GS(p) I drain cut-off current DSX I gate leakage current GSS R drain-source on-state resistance DSon Diode V forward voltage F I reverse current R 8. Dynamic characteristics Table 8 ...

Page 5

... Test circuit BF1118_1118R_1118W_1118WR Product data sheet 001aal987 600 800 1000 f (MHz  (diode F Figure 3. Fig 2. V BF1118/BF1118R/ BF1118W/BF1118RW Ω input V All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 January 2012 BF1118(R); BF1118W(R) 0 ISL off (dB) −20 −40 −60 0 ...

Page 6

... NXP Semiconductors 9. Package outline Plastic surface-mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143B Fig 4. Package outline SOT143B BF1118_1118R_1118W_1118WR Product data sheet BF1118(R); BF1118W( ...

Page 7

... NXP Semiconductors Plastic surface-mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143R Fig 5. Package outline SOT143R BF1118_1118R_1118W_1118WR Product data sheet BF1118(R); BF1118W( ...

Page 8

... NXP Semiconductors Plastic surface-mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 0.4 0.7 1.1 mm 0.1 0.8 0.3 0.5 OUTLINE VERSION IEC SOT343N Fig 6. Package outline SOT343N BF1118_1118R_1118W_1118WR Product data sheet BF1118(R); BF1118W( scale ...

Page 9

... NXP Semiconductors Plastic surface-mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 0.4 1.1 0.7 mm 0.1 0.3 0.8 0.5 OUTLINE VERSION IEC SOT343R Fig 7. Package outline SOT343R BF1118_1118R_1118W_1118WR Product data sheet scale ...

Page 10

... NXP Semiconductors 10. Abbreviations Table 9. Acronym AQL MOSFET RF S4 VCR 11. Revision history Table 10. Revision history Document ID BF1118_1118R_1118W_1118WR v.2 Modifications: BF1118_1118R_1118W_1118WR v.1 BF1118_1118R_1118W_1118WR Product data sheet BF1118(R); BF1118W(R) Abbreviations Description Acceptable Quality Level Metal-Oxide Semiconductor Field-Effect Transistor Radio Frequency Special inspection level 4 Video Cassette Recorder ...

Page 11

... Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 12

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 13

... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 7 Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 4 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 12 Legal information ...

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