BF1207 NXP Semiconductors, BF1207 Datasheet
BF1207
Related parts for BF1207
BF1207 Summary of contents
Page 1
... Rev. 2 — 7 September 2011 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC) ...
Page 2
... All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 September 2011 Dual N-channel dual gate MOSFET Min Typ - - 107 C [ 100 100 - Symbol G1B G1A BF1207 Max Unit - 180 2.2 2.7 pF 1 105 - dB ...
Page 3
... Rev. 2 — 7 September 2011 Dual N-channel dual gate MOSFET [1] Marking code M2* Conditions Min Max 10 - 10 - 107 C [ 180 sp 65 +150 - 150 © NXP B.V. 2011. All rights reserved. BF1207 Version SOT363 Unit C ...
Page 4
... T (°C) sp Conditions Typ 240 Min = 10 G1 G2 0.5 S- 0.5 S-G2 = 100 A 0 100 A 0 k G1 [1] 13 [2] 9 BF1207 Unit K/W Typ Max Unit - - © NXP B.V. 2011. All rights reserved ...
Page 5
... D( DS(A) DS(B) G1B G2 G1A 001aac881 amplifier A is on; amplifier B is off amplifier A is off; amplifier B is on. GG Functional diagram BF1207 Typ Max Unit - © NXP B.V. 2011. All rights reserved ...
Page 6
... All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 September 2011 Dual N-channel dual gate MOSFET [1] Min 0 [ MHz 100 BF1207 Typ Max Unit 2.2 2 ...
Page 7
... V = 1.9 V. G1-S(A) ( 1.8 V. G1-S(A) ( 1.7 V. G1-S(A) ( 1.6 V. G1-S(A) ( 1.5 V. G1-S(A) ( 1.4 V. G1-S(A) ( 1.3 V. G1-S(A) ( 1.2 V. G1-S(A) ( 1.1 V. G1-S( DS(A) G2-S j Amplifier A: output characteristics; typical values BF1207 001aaa883 (1) (2) (3) (4) (5) (6) (7) (8) ( (V) DS © NXP B.V. 2011. All rights reserved ...
Page 8
... G1(A) ( 120 k. G1(A) ( 150 k. G1( G2-S j Amplifier A: drain current as a function of V and V ; typical values GG 001aac886 (V) supply Figure 3. BF1207 001aac885 (1) (2) (3) (4) (5) ( © NXP B.V. 2011. All rights reserved ...
Page 9
... Rev. 2 — 7 September 2011 Dual N-channel dual gate MOSFET 0 gain (dB MHz; see DS(A) DS(B) G1-S(B) Figure 29. AGC voltage; typical values 001aac889 40 50 gain reduction (dB) Figure 29. BF1207 001aac888 (V) AGC © NXP B.V. 2011. All rights reserved ...
Page 10
... DS(A) G2-S DS( mA. D(A) frequency; typical values BF1207 001aac891 −10 2 ϕ fs (deg) −10 − (MHz G1-S(B) 001aac893 (MHz G1-S(B) © NXP B.V. 2011. All rights reserved ...
Page 11
... BF1207 C; typical values Magnitude Angle (ratio) (deg) 1.42 0.992 2.86 0.992 5.66 0.990 8.49 0.989 11.28 0.986 14.03 0.984 16.80 0.981 ...
Page 12
... All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 September 2011 Dual N-channel dual gate MOSFET [1] Min 0 [ MHz unw 100 BF1207 Typ Max Unit 1.8 2 1.3 ...
Page 13
... Dual N-channel dual gate MOSFET (mA ( 1.7 V. G1-S(B) ( 1.6 V. G1-S(B) ( 1.5 V. G1-S(B) ( 1.4 V. G1-S(B) ( 1.3 V. G1-S(B) ( 1.2 V. G1-S(B) = 1.1 V. (7) V G1-S( G2-S G1-S(A) j values BF1207 001aac895 (1) (2) (3) (4) (5) (6) ( (V) DS © NXP B.V. 2011. All rights reserved ...
Page 14
... G1-S(A) j voltage; typical values −40 −30 −20 − DS(B) G2-S G1-S(A) gate1 current; typical values BF1207 001aac897 (1) (2) (3) (4) ( (V) G2-S 001aac899 0 I (μ © NXP B.V. 2011. All rights reserved ...
Page 15
... DS( 150 k (connected to V G1( C; see T Figure 30. amb function of AGC voltage; typical values 001aac902 40 60 gain reduction (dB MHz amb BF1207 001aac901 (V) AGC = G1-S( MHz C; see Figure 30. © NXP B.V. 2011. All rights reserved ...
Page 16
... DS(B) G2-S DS( mA. D(B) frequency; typical values BF1207 001aac904 −10 2 ϕ fs (deg) −10 − (MHz G1-S(A) 001aac906 (MHz G1-S(A) © NXP B.V. 2011. All rights reserved ...
Page 17
... BF1207 C; typical values. Angle (deg) 1.39 2.79 5.49 8.21 10.91 13.63 16.40 19.13 21.93 24.85 27.75 © NXP B.V. 2011. All rights reserved ...
Page 18
... All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 September 2011 Dual N-channel dual gate MOSFET V DS( 2.2 μ 4 2.2 μH 50 Ω 4 DS( 001aac907 V DS( 2.2 μH 4 Ω 2.2 μH 4 DS( 001aac908 BF1207 © NXP B.V. 2011. All rights reserved ...
Page 19
... All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 September 2011 Dual N-channel dual gate MOSFET detail 0.45 0.25 0.2 0.2 0.1 0.15 0.15 EUROPEAN PROJECTION BF1207 SOT363 ISSUE DATE 04-11-08 06-03-16 © NXP B.V. 2011. All rights reserved ...
Page 20
... NXP Semiconductors 11. Revision history Table 12. Revision history Document ID Release date BF1207 v.2 20110907 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...
Page 21
... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 September 2011 BF1207 Dual N-channel dual gate MOSFET © NXP B.V. 2011. All rights reserved ...
Page 22
... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 September 2011 BF1207 Dual N-channel dual gate MOSFET © NXP B.V. 2011. All rights reserved ...
Page 23
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BF1207 All rights reserved. Date of release: 7 September 2011 Document identifier: BF1207 ...