BF1211WR NXP Semiconductors, BF1211WR Datasheet
BF1211WR
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BF1211WR Summary of contents
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... DATA SHEET BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs Product specification DISCRETE SEMICONDUCTORS 2003 Dec 16 ...
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... V digital and analog television tuner applications. DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1211, BF1211R and BF1211WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. 3 handbook, 2 columns ...
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... THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to soldering point th(j-s) BF1211; BF1211R BF1211WR 2003 Dec 16 BF1211; BF1211R; BF1211WR CAUTION PACKAGE DESCRIPTION plastic surface mounted package; 4 leads plastic surface mounted package; reverse pinning; 4 leads plastic surface mounted package; reverse pinning; 4 leads CONDITIONS 116 C; note 1 ...
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... G2-S DS note G2 G1 Product specification BF1211; BF1211R; BF1211WR MIN G1 G2 0.5 S- 0.5 S-G2 = 100 0 100 0. k ...
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... (opt 800 MHz 3 (opt) input level for MHz; note 1 unw AGC AGC AGC 5 BF1211; BF1211R; BF1211WR MIN. TYP 2.1 1.1 0.9 15 3.5 S 0.9 1.3 ...
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... Dec 16 MDB829 handbook, halfpage (5) (6) (7) 1.5 2 2.5 V G1-S (V) ( G2-S MDB831 handbook, halfpage (1) (2) (3) (4) (5) (6) (7) 1 G1-S (V) ( G2-S 6 BF1211; BF1211R; BF1211WR (mA G2 1 1.2 V. G1-S G1-S ( 1 1.1 V. G1-S G1-S ( 1 ...
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... I G1 (μA) MDB835 handbook, halfpage (1) (2) (3) (4) (5) (6) ( (V) ; see Fig.21 120 k BF1211; BF1211R; BF1211WR (mA G2 k (connected see Fig.21 Fig ...
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... V G2-S (V) ); see Fig.21 MDB839 handbook, halfpage gain reduction (dB C. amb 8 BF1211; BF1211R; BF1211WR 0 gain (dB) −10 −20 −30 −40 −50 − k (connected C. see Fig.21 MHz; T amb Fig ...
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... mA Fig.20 Output admittance as a function of 9 Product specification BF1211; BF1211R; BF1211WR 3 10 ϕ (MHz C. amb a function of frequency; typical values. ...
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... mA; T G2-S D amb F min (dB) (ratio) 0.9 0.693 1.3 0.707 10 Product specification BF1211; BF1211R; BF1211WR C3 4 ≈ 2.2 μH 50 Ω DUT C4 4 MGS315 = 25 C amb s 12 ANGLE MAGNITUDE (ratio) (deg) (ratio) 0.0005 89.3 0.993 ...
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... IEC SOT143B 2003 Dec scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES JEDEC JEITA 11 Product specification BF1211; BF1211R; BF1211WR detail 2.5 0.45 0.55 0.2 0.1 0.1 2.1 0.15 0.45 EUROPEAN PROJECTION SOT143B ISSUE DATE 04-11-16 06-03-16 ...
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... Dec scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES JEDEC JEITA SC-61AA 12 Product specification BF1211; BF1211R; BF1211WR detail 2.5 0.55 0.45 0.2 0.1 0.1 2.1 0.25 0.25 EUROPEAN PROJECTION SOT143R ISSUE DATE 04-11-16 06-03-16 ...
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... OUTLINE VERSION IEC SOT343R 2003 Dec scale 0.25 2.2 1.35 1.3 1.15 0.10 1.8 1.15 REFERENCES JEDEC EIAJ 13 BF1211; BF1211R; BF1211WR detail 2.2 0.45 0.23 0.2 0.2 2.0 0.15 0.13 EUROPEAN PROJECTION Product specification SOT343R 0.1 ISSUE DATE ...
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... Terms and conditions of commercial sale of NXP Semiconductors. 2003 Dec 16 BF1211; BF1211R; BF1211WR (2) This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... Dec 16 BF1211; BF1211R; BF1211WR Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ...
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... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...