BF1212R NXP Semiconductors, BF1212R Datasheet
BF1212R
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BF1212R Summary of contents
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... DATA SHEET BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification DISCRETE SEMICONDUCTORS 2003 Nov 14 ...
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... V digital and analog television tuner applications. DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1212, BF1212R and BF1212WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. 3 handbook, 2 columns ...
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... THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to soldering point th j-s BF1212; BF1212R BF1212WR 2003 Nov 14 BF1212; BF1212R; BF1212WR CAUTION PACKAGE DESCRIPTION plastic surface mounted package; 4 leads plastic surface mounted package; reverse pinning; 4 leads plastic surface mounted package; reverse pinning; 4 leads CONDITIONS 116 C; note 1 ...
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... G2-S DS note G2 G1 Product specification BF1212; BF1212R; BF1212WR MIN G1 G2 0.5 S- 0.5 S-G2 = 100 0 100 0. 150 k ...
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... (opt 800 MHz 3 (opt) input level for MHz; note 1 unw AGC AGC AGC 5 BF1212; BF1212R; BF1212WR MIN. TYP 1.7 1.1 0.9 15 0.9 1.1 ...
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... V G1-S ( MLE235 handbook, halfpage (1) (2) (3) (4) (5) (6) (7) 1 G1-S ( BF1212; BF1212R; BF1212WR (mA ( 1 1.1 V. G1-S G1-S ( 1 1.0 V. G1-S G1-S ( 1 0.9 V. G1-S G1-S ( 1 0.8 V. G1-S G1-S ( ...
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... MLE239 (2) handbook, halfpage (3) (4) (5) (6) ( G2 connected see Fig.21. 7 BF1212; BF1212R; BF1212WR (mA G2 150 k (connected see Fig.21 Fig.10 Drain current as a function of gate 1 supply voltage ...
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... R = 150 k G1 (connected see Fig.21. MLE243 handbook, halfpage gain reduction (dB C. amb 8 BF1212; BF1212R; BF1212WR 0 gain (dB) −20 −40 − 150 k(connected C. see Fig.21 MHz; T amb Fig ...
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... Nov 14 MLE245 handbook, halfpage (MHz) MLE247 −10 2 handbook, halfpage ϕ fs (deg) −10 − (MHz) 9 BF1212; BF1212R; BF1212WR (μS) ϕ mA; T ...
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... mA; T G2-S D amb F min (dB) (ratio) 0.9 0.695 1.1 0.634 10 Product specification BF1212; BF1212R; BF1212WR C3 4 ≈ 2.2 μH 50 Ω DUT C4 4 MGS315 = 25 C amb s 12 ANGLE MAGNITUDE (ratio) (deg) (ratio) 0.0005 86.9 0.990 ...
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... IEC SOT143B 2003 Nov scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES JEDEC JEITA 11 Product specification BF1212; BF1212R; BF1212WR detail 2.5 0.45 0.55 0.2 0.1 0.1 2.1 0.15 0.45 EUROPEAN PROJECTION SOT143B ISSUE DATE 04-11-16 06-03-16 ...
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... Nov scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES JEDEC JEITA SC-61AA 12 Product specification BF1212; BF1212R; BF1212WR detail 2.5 0.55 0.45 0.2 0.1 0.1 2.1 0.25 0.25 EUROPEAN PROJECTION SOT143R ISSUE DATE 04-11-16 06-03-16 ...
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... OUTLINE VERSION IEC SOT343R 2003 Nov scale 0.25 2.2 1.35 1.3 1.15 0.10 1.8 1.15 REFERENCES JEDEC EIAJ 13 BF1212; BF1212R; BF1212WR detail 2.2 0.45 0.23 0.2 0.2 2.0 0.15 0.13 EUROPEAN PROJECTION Product specification SOT343R 0.1 ISSUE DATE ...
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... Terms and conditions of commercial sale of NXP Semiconductors. 2003 Nov 14 BF1212; BF1212R; BF1212WR (2) This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... Nov 14 BF1212; BF1212R; BF1212WR Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ...
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... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...