STPS30170DJF STMicroelectronics, STPS30170DJF Datasheet - Page 2

• Manufacturer Part Number: STPS30170DJF
• Description: Power Schottky rectifier
• Manufacturer: STMicroelectronics

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Characteristics
Table 2.
1.
Table 3.
Table 4.
1. Pulse test: t
2. Pulse test: t
To evaluate the conduction losses use the following equation:
P = 0.65 x I
Symbol
Symbol
Symbol
I
R
V
F(RMS)
I
P
V
I
I
F(AV)
T
FSM
th(j-c)
ARM
R
RRM
F
T
stg
dPtot
(1)
(2)
dTj
j
<
Repetitive peak reverse voltage
Forward rms current
Average forward current
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
Junction to case
Reverse leakage current
Forward voltage drop
Rth(j-a)
F(AV)
1
p
p
Absolute ratings (limiting values, anode terminals short circuited)
Thermal resistance
Static electrical characteristics (anode terminals short circuited)
= 5 ms, δ < 2%
= 380 µs, δ < 2%
Parameter
+ 0.0046 I
condition to avoid thermal runaway for a diode on its own heatsink
F
2
(RMS)
Doc ID 16749 Rev 3
T
T
T
T
T
T
Parameter
Parameter
j
j
j
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
Test conditions
T
t
T
t
V
I
I
p
p
F
F
c
c
R
(1)
= 10 ms sinusoidal
= 1 µs, T
= 15 A
= 30 A
= 80 °C, δ = 0.5
= 25 °C
= V
RRM
j
= 25 °C
Min.
-
-
-
-
-
-
Typ.
0.65
0.71
4
-
-
-
-65 to + 175
12500
Value
Value
170
200
150
2.5
45
30
Max.
0.88
0.70
0.95
0.79
15
12
°C/W
Unit
Unit
Unit
mA
µA
°C
°C
W
V
A
A
A
V