STPS20SM80C STMicroelectronics, STPS20SM80C Datasheet - Page 3

• Manufacturer Part Number: STPS20SM80C
• Description: Power Schottky rectifier
• Manufacturer: STMicroelectronics

Specifications of STPS20SM80C

• Insulated Voltage: 2000 V
• Package Capacitance: 45 pF

Table 4.
1. Pulse test: t
2. Pulse test: t
Figure 2.
Figure 4.
0.001
Symbol
0.01
9
8
7
6
5
4
3
2
1
0
0.1
V
0
I
1
0.01
R
P
F
F(AV)
(1)
(2)
P
P
ARM
1
ARM
(W)
(1µs)
(t p )
2
Reverse leakage current
Forward voltage drop
p
p
Static electrical characteristics (per diode)
To evaluate the conduction losses use the following equation:
P = 0.52 x I
0.1
Average forward power dissipation
versus average forward current
(per diode)
Normalized avalanche power
derating versus pulse duration
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
3
Parameter
δ = 0.05
4
5
1
F(AV)
δ = 0.1
6
+ 0.013 x I
7
δ = t / T
δ = 0.2
10
p
8
T
T
T
T
T
T
T
T
T
j
j
j
j
j
j
j
j
t
9
p
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
δ = 0.5
F
100
10
2
(RMS)
Doc ID 018720 Rev 1
Test conditions
I
F(AV)
11
t (µs)
δ = 1
p
(A)
1000
12
V
I
I
I
F
F
F
R
Figure 3.
Figure 5.
1.2
0.8
0.6
0.4
0.2
= 5 A
= 10 A
= 20 A
= V
1
0
12
11
10
25
9
8
7
6
5
4
3
2
1
0
P
0
I
ARM
F(AV)
P
RRM
ARM
(25 °C)
(A)
(T )
j
25
50
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
Normalized avalanche power
derating versus junction
temperature
Min.
50
-
-
-
-
-
-
-
-
TO-220AB / I PAK / D PAK
75
75
T
0.590
0.515
0.710
0.595
0.850
0.690
Typ.
amb
R th(j-a) = R th(j-c)
5.8
TO-220FPAB
5
(°C)
100
2
100
2
0.640
0.550
0.780
0.650
0.945
0.780
Max.
125
25
15
125
150
Unit
mA
µA
T (°C)
V
j
175
3/11
150