STPS30M100DJF STMicroelectronics, STPS30M100DJF Datasheet - Page 3

• Manufacturer Part Number: STPS30M100DJF
• Description: Schottky Barrier, Power Schottky
• Manufacturer: STMicroelectronics

Figure 2.
Figure 4.
Figure 6.
0.001
0.01
30.0
25.0
20.0
15.0
10.0
220
200
180
160
140
120
100
0.1
5.0
0.0
80
60
40
20
1.E-03
1
0.01
0
P
0
I (A)
P
P
ARM
M
I
M
F(AV)
ARM
(1 µs)
(W)
δ = 0.5
(t p )
5
t
δ = 0.05
0.1
Average forward power dissipation
versus average forward current
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values)
10
1.E-02
δ = 0.1
1
15
t (µs)
p
δ = 0.2
20
10
1.E-01
25
δ = 0.5
100
δ = t / T
T = 125 °C
T = 75 °C
T = 25 °C
c
c
c
30
p
Doc ID 16751 Rev 4
I
F(AV)
T
t(s)
δ = 1
1.E+00
(A)
t
p
1000
35
Figure 3.
Figure 5.
Figure 7.
1.2
0.8
0.6
0.4
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
35
30
25
20
15
10
1
0
5
0
1.E-05
25
0
P
I
Z
F(AV)
ARM
δ = t / T
Single pulse
P
th(j-c)
ARM
(A)
p
(25 °C)
/R
(T j )
th(j-c)
T
25
1.E-04
50
t
Average forward current versus
ambient temperature (δ = 0.5)
p
Normalized avalanche power
derating versus junction
temperature
Relative variation of thermal
impedance junction to case versus
pulse duration
50
1.E-03
R
75
th(j-a)
T (°C)
= R
75
j
th(j-c)
1.E-02
100
100
1.E-01
T
amb
125
125
(°C)
t (s)
p
1.E+00
150
150
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