STPS30M60C STMicroelectronics, STPS30M60C Datasheet - Page 4

• Manufacturer Part Number: STPS30M60C
• Description: Power Schottky rectifier
• Manufacturer: STMicroelectronics

Characteristics
4/10
Figure 6.
Figure 8.
Figure 10. Forward voltage drop versus
240
220
200
180
160
140
120
100
1000.0
1.E+02
1.E+01
1.E+00
80
60
40
20
1.E-01
1.E-02
1.E-03
100.0
1.E-03
0
10.0
1.0
0.1
I (A)
M
I
0.0
M
0
I (A)
FM
(Typical values)
I (mA)
R
T = 125 °C
δ = 0.5
(Maximum values)
j
0.2
t
T = 125 °C
j
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
forward current (per diode)
10
0.4
1.E-02
20
T = 125 °C
T = 100 °C
T = 50 °C
T = 25 °C
T = 150 °C
T = 75 °C
(Maximum values)
0.6
j
j
j
j
j
j
T = 25 °C
j
0.8
30
1.E-01
1.0
40
1.2
T = 125 °C
T = 25 °C
T = 75 °C
c
50
c
c
Doc ID 022020 Rev 1
1.4
V (V)
V (V)
FM
t(s)
1.E+00
R
1.6
60
Figure 7.
Figure 9.
Figure 11. Thermal resistance junction to
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10000
80
70
60
50
40
30
20
10
1000
1.E-04
0
100
0
R
Z
th(j-c)
th(j-a)
1
Single pulse
C(pF)
/R
(°C/W)
5
th(j-c)
epoxy printed board copper thickness = 35 µm
Relative thermal impedance
junction to case versus pulse
duration
Junction capacitance versus
reverse voltage applied
(typical values, per diode)
ambient versus copper surface
under tab
1.E-03
10
15
1.E-02
D PAK
2
20
10
25
1.E-01
30
STPS30M60C
V
osc
F = 1 MHz
T = 25 °C
= 30 mV
j
S (cm )
35
Cu
V (V)
t (s)
RMS
p
R
1.E+00
2
100
40