STPS16L40C STMicroelectronics, STPS16L40C Datasheet
STPS16L40C
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STPS16L40C Summary of contents
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... Rth July 2003 - 150 °C 0.45 V Parameter Tc = 140 sinusoidal µs square F=1kHz tp = 100 µs square tp = 1µ 25°C STPS16L40CT TO-220AB Value Per diode 16 Per device 180 1 2 ...
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... STPS16L40CT THERMAL RESISTANCES Symbol R Junction to case th(j-c) R th(c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage cur- R rent V * Forward voltage drop F Pulse test : * tp = 380 µs, < evaluate the conduction losses use the following equation : ...
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... Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration . Zth(j-c)/Rth(j-c) 1.0 0.8 = 0.5 Tc=25°C 0.6 Tc=75°C 0.4 = 0.2 Tc=125°C = 0.1 0.2 0.0 1E-1 1E+0 1E-4 Fig. 8: Junction capacitance versus reverse voltage applied (typical values) (per diode). C(pF) 2000 1000 500 200 VR(V) 100 1.2 1.4 1.6 1.8 STPS16L40CT Single pulse tp(s) 1E-3 1E-2 1E-1 VR( =tp/T 1E+0 F=1MHz Tj=25°C 50 3/4 ...
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... Ordering type Marking STPS16L40CT STPS16L40CT EPOXY MEETS UL94,V0 n COOLING METHOD : C n RECOMMENDED TORQUE VALUE : 0.55 M.N n MAXIMUM TORQUE VALUE : 0.70 M.N n Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...