STPS30L120C STMicroelectronics, STPS30L120C Datasheet - Page 4

• Manufacturer Part Number: STPS30L120C
• Description: Power Schottky Rectifier
• Manufacturer: STMicroelectronics

Specifications of STPS30L120C

• Insulated Package: TO-220FPAB

4/10
Figure 6.
Figure 8.
Figure 10. Reverse leakage current versus
1.E+02
1.E+01
1.E+00
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
240
220
200
180
160
140
120
100
1.E-01
1.E-02
1.E-03
80
60
40
20
1.E-03
1.E-03
0
Z
I (A)
M
th(j-c)
Single pulse
0
I (mA)
R
I
M
10
/R
th(j-c)
δ
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
=0.5
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220AB, I
reverse voltage applied
(typical values, per diode)
20
t
30
1.E-02
1.E-02
40
t (s)
p
50
T
T
T
T
T
T
j
t(s)
=100°C
j
j
=150°C
=75°C
j
j
j
=50°C
=25°C
=125°C
60
70
1.E-01
1.E-01
TO-220AB, I PAK
80
90
V (V)
R
100
2
2
Doc ID 16313 Rev 3
T
T
T
C
C
PAK)
=125°C
C
=75°C
=25°C
110
1.E+00
1.E+00
120
Figure 7.
Figure 9.
Figure 11. Junction capacitance versus
120
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1000
80
60
40
20
100
1.E-03
1.E-03
0
Z
I (A)
M
1
th(j-c)
C(pF)
Single pulse
I
M
/R
th(j-c)
δ
=0.5
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
t
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAB)
reverse voltage applied
(typical values, per diode)
1.E-02
1.E-02
10
1.E-01
t (s)
t(s)
p
1.E-01
100
1.E+00
TO220FPAB
V (V)
V
OSC
R
F=1MHz
T
=30mV
j
=25°C
T
T
T
C
C
=125°C
C
=25°C
=75°C
RMS
1.E+01
1.E+00
1000