STPS20S100C STMicroelectronics, STPS20S100C Datasheet - Page 2

• Manufacturer Part Number: STPS20S100C
• Description: 100 V, 20 A power Schottky rectifier
• Manufacturer: STMicroelectronics

Characteristics
1
2/9
Characteristics
Table 2.
1.
Table 3.
When the diodes 1 and 2 are used simultaneously:
Δ T
Table 4.
1. Pulse test: t
2. Pulse test: t
To evaluate the conduction losses use the following equation: P = 0.62 x I
Symbol
Symbol
Symbol
I
R
R
V
F(RMS)
V
P
dV/dt
R
R
I
I
I
F(AV)
T
R
FSM
th(j-c)
th(j-c)
RRM
ARM
j(diode 1)
F
th(c)
th(c)
T
stg
dPtot
(1)
dTj
(2)
j
<
Reverse leakage
current
Forward voltage drop
Repetitive peak reverse voltage
Forward rms current
Average forward
current δ = 0.5
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
Critical rate of rise of reverse voltage
Junction to case
Junction to case
Rth(j-a)
= P
1
p
p
Absolute ratings (limiting values, per diode)
Thermal resistance
Static electrical characteristics (per diode)
= 5 ms, δ < 2%
= 380 µs, δ < 2%
(diode 1)
Parameter
condition to avoid thermal runaway for a diode on its own heatsink
x R
th(j-c)(Per diode)
TO-220AB / I
TO-220FPAB
Doc ID 11281 Rev 2
TO-220FPAB
TO-220AB / I
T
T
T
T
T
T
T
T
j
j
j
j
j
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
Parameter
Parameter
Tests conditions
2
PAK T
+ P
2
PAK
(diode 2)
V
I
I
I
T
t
t
F
F
F
p
p
R
c
c
= 5 A
= 10 A
= 20 A
= 10ms sinusoidal
= 1µs T
= 150 °C
= 140 °C
(1)
= V
RRM
x R
j
th(c)
= 25 °C
Per diode
Per device
Per diode
Per device
Per diode
Total
Coupling
Per diode
Total
Coupling
Min.
Typ.
0.57
0.66
0.74
1.3
-65 to + 175
F(AV)
10000
Value
Value
7200
100
180
175
2.2
1.3
0.3
4.5
3.5
2.5
30
10
20
10
20
STPS20S100C
Max.
0.73
0.61
0.85
0.71
0.94
0.80
+ 0.009 I
3.5
4.5
V/µs
°C/W
°C/W
Unit
Unit
Unit
mA
F
µA
W
°C
°C
V
A
A
A
V
2
(RMS)