STPS30170C STMicroelectronics, STPS30170C Datasheet - Page 4

• Manufacturer Part Number: STPS30170C
• Description: High Voltage Power Schottky Rectifier
• Manufacturer: STMicroelectronics

Specifications of STPS30170C

• Insulated Package: TO-220FPAB
• Insulating Voltage: 2000 V DC
• Capacitance: 45 pF

STPS30170C
Figure
impedance junction to case versus pulse
duration (per diode) (TO-220AB, TO-247,
D
Figure 9: Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
Figure 11: Forward voltage drop versus
forward current (maximum values, per diode,
low level)
4/9
15.0
12.5
10.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
7.5
5.0
2.5
0.0
2
1.E-03
1.E+06
1.E+05
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
PAK)
0.0
Single pulse
d=0.2
d=0.1
d=0.5
TO-220AB, TO -247 & D²PAK
0
0.1
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170
7:
0.2
V
Relative
FM
(V)
1.E-02
0.3
(Maximum values)
(Maximum values)
0.4
(Typical values)
(Typical values)
Tj=125°C
Tj=125°C
Tj=125°C
Tj=125°C
T
T
T
j
j
j
T
=175°C
=125°C
=150°C
T
j
=75°C
j
=25°C
variation
0.5
t
P
(s)
0.6
1.E-01
0.7
V
R
(V)
d
of
=t /T
p
0.8
(Maximum values)
T
Tj=25°C
thermal
0.9
t
p
1.E+00
1.0
Figure
impedance junction to case versus pulse
duration (per diode) (TO-220FPAB)
Figure
reverse voltage applied (typical values, per
diode)
Figure 12: Forward voltage drop versus
forward current (maximum values, per diode,
high level)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
1.E-03
1000
10
100
1
10
0.0
1
d=0.5
d=0.2
D=0.1
TO-220FPAB
Single pulse
0.2
8:
10:
(Maximum values)
(Maximum values)
1.E-02
(Typical values)
(Typical values)
Tj=125°C
Tj=125°C
Tj=125°C
Tj=125°C
Relative
0.4
Junction
10
0.6
1.E-01
t
variation
P
0.8
(s)
capacitance
V
R
(V)
(Maximum values)
1.0
100
Tj=25°C
1.E+00
V
FM
(V)
1.2
d
of
=t /T
p
V
OSC
F=1MHz
T
=30mV
j
=25°C
T
thermal
1.4
versus
RMS
t
p
1.E+01
1000
1.6