STPS60L30C STMicroelectronics, STPS60L30C Datasheet
STPS60L30C
Available stocks
Related parts for STPS60L30C
STPS60L30C Summary of contents
Page 1
... Rth July 2003 - Ed 150 °C 0.38 V Parameter Tc = 130 Sinusoidal µ 1kHz square tp = 1µ 25°C STPS60L30CW TO247 Value Per diode 60 Per device 600 2 ...
Page 2
... STPS60L30CW THERMAL RESISTANCE Symbol R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage R current V * Forward voltage drop F Pulse test : * tp = 380 µs, < evaluate the conduction losses use the following equation : ...
Page 3
... Tj=125°C 10 VFM(V) 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 Tc=25°C Tc=75°C 0.4 Tc=125°C 0.2 0.0 1E-4 1E-1 1E+0 Fig. 8: Junction capacitance versus reverse voltage applied (typical values) (per diode). C(nF STPS60L30CW tp(s) Single pulse 1E-3 1E-2 1E-1 VR( =tp/T tp 1E+0 F=1MHz Tj=25°C 50 3/4 ...
Page 4
... Ordering type Marking STPS60L30CW STPS60L30CW Epoxy meets UL94,V0 n Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...