STPS15L30C STMicroelectronics, STPS15L30C Datasheet

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STPS15L30C

Manufacturer Part Number
STPS15L30C
Description
Low Drop Power Schottky Rectifier
Manufacturer
STMicroelectronics
Datasheet

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MAIN PRODUCTS CHARACTERISTICS
FEATURES AND BENEFITS
DESCRIPTION
Dual center tab Schottky rectifier suited for switch
Mode Power Supply and high frequency DC to DC
converters.
Package in DPAK, this device is intended for use
in
free-wheeling and polarity protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
* :
July 2003 - Ed : 2A
Symbol
I
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD VOLTAGE DROP
HIGH AVALANCHE CAPABILITY
LOW THERMAL RESISTANCE
AVALANCHE CAPABILITY SPECIFIED
V
F(RMS)
P
dV/dt
I
I
I
F(AV)
T
dPtot
RRM
FSM
RRM
ARM
Tj
dTj
low
stg
V
Tj (max)
F
V
I
voltage,
F(AV)
(max)
®
RRM
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Peak repetitive reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise reverse voltage
Rth j
(
1
high
a
)
thermal runaway condition for a diode on its own heatsink
LOW DROP POWER SCHOTTKY RECTIFIER
frequency
2 x 7.5 A
150 °C
0.39 V
30 V
Parameter
inverters,
Tc = 140°C
tp = 10 ms sinusoidal
tp=2 µs square F=1kHz
tp = 1µs Tj = 25°C
= 0.5
Per diode
Per device
K
A1
A2
STPS15L30CB
DPAK
A1
- 65 to + 175
10000
Value
A2
2800
K
150
7.5
30
10
15
75
1
Unit
V/µs
W
V
A
A
A
A
C
C
1/5

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STPS15L30C Summary of contents

Page 1

... Rth July 2003 - 7 150 °C 0.39 V inverters, Parameter Tc = 140° sinusoidal tp=2 µs square F=1kHz tp = 1µ 25°C STPS15L30CB DPAK Value Unit 30 10 7.5 Per diode 15 Per device 75 1 ...

Page 2

... STPS15L30CB THERMAL RESISTANCES Symbol R Junction to case th(j-c) R Coupling th(c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage current Forward voltage drop F Pulse test : * tp = 380 µs, < evaluate the conduction losses use the following equation : ...

Page 3

... Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 = 0.5 0.6 Tc=25°C 0.5 Tc=75°C 0.4 = 0.2 0.3 = 0.1 Tc=125°C 0.2 Single pulse 0.1 0.0 1.E-01 1.E+00 1.E-03 STPS15L30CB Rth(j-a)=Rth(j-c) Rth(j-a)=70°C/W T Tamb(° 100 (t ) (25°C) T (° 100 tp(s) 1.E-02 1.E-01 125 150 125 150 T tp =tp/T 1 ...

Page 4

... STPS15L30CB Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). IR(mA) 1.E+03 Tj=150°C 1.E+02 Tj=125°C 1.E+01 Tj=100°C Tj=75°C 1.E+00 Tj=50°C 1.E-01 Tj=25°C VR(V) 1.E- Fig. 9: Forward voltage drop versus forward current. IFM(A) 100 Tj=125°C Tj=125°C (Maximum values) (Maximum values) Tj=125°C Tj=125° ...

Page 5

... Spain - Sweden - Switzerland - United Kingdom - United States. REF 6 1.6 Package Weight DPAK 0.30 g DPAK 0.30 g STMicroelectronics GROUP OF COMPANIES http://www.st.com STPS15L30CB DIMENSIONS Millimeters Inches Min. Max Min. Max. 2.20 2.40 0.086 0.094 0.90 1.10 0.035 0.043 0.03 0.23 0.001 0.009 0.64 0.90 0.025 0.035 5.20 5.40 0.204 0.212 ...

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