STPS20170C STMicroelectronics, STPS20170C Datasheet - Page 2

• Manufacturer Part Number: STPS20170C
• Description: High Voltage Power Schottky Rectifier
• Manufacturer: STMicroelectronics

STPS20170C
Table 3: Absolute Ratings (limiting values, per diode)
Table 4: Thermal Parameters
Table 5: Static Electrical Characteristics (per diode)
Pulse test:
To evaluate the conduction losses use the following equation: P = 0.64 x I
2/8
* :
When the diodes 1 and 2 are used simultaneously:
∆
Symbol
Symbol
Symbol
I
R
V
F(RMS)
I
P
dPtot
---------------
Tj(diode 1) = P(diode 1) x R
dV/dt
R
V
I
F(AV)
T
dTj
I
FSM
th(j-c)
RRM
ARM
R
T
th(c)
F
stg
j
**
*
<
------------------------- -
Rth j a
Repetitive peak reverse voltage
RMS forward voltage
Average forward current
δ = 0.5
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Junction to case
Reverse leakage current
Forward voltage drop
* tp = 5 ms,
** tp = 380 µs,
(
1
–
)
thermal runaway condition for a diode on its own heatsink
Parameter
δ
< 2%
th(j-c)
δ
< 2%
(Per diode) + P(diode 2) x R
TO-220AB / D
TO-220FPAB
TO-220AB / D
TO-220FPAB
T
T
T
T
T
T
TO-220AB /
D
TO-220FPAB
j
j
j
j
j
j
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
2
Parameter
Parameter
PAK / I
Tests conditions
2
2
2
PAK / I
PAK / I
PAK
th(c)
V
I
I
F
F
R
= 10A
= 20A
= V
F(AV)
2
2
T
T
t
t
PAK
PAK
p
p
c
c
= 10ms sinusoidal
= 1µs T
RRM
= 155°C
= 135°C
+ 0.011 I
Per diode
Total
Per diode
Total
Coupling
F
j
Min.
2
= 25°C
(RMS)
Per diode
Per device
Per diode
Per device
0.69
0.79
Typ
-65 to + 175
Max.
0.90
0.75
0.99
0.86
15
15
Value
10000
2.2
1.3
4.5
3.5
0.3
2.5
Value
6700
170
180
175
30
10
20
10
20
Unit
mA
µA
V
°C/W
Unit
V/µs
Unit
°C
°C
W
V
A
A
A