STPS20SM60 STMicroelectronics, STPS20SM60 Datasheet - Page 2

• Manufacturer Part Number: STPS20SM60
• Description: Power Schottky rectifier
• Manufacturer: STMicroelectronics

Characteristics
1
2/7
Characteristics
Table 2.
1. For temperature or pulse time duration deratings, please refer to
2. See
3.
Table 3.
Table 4.
1. Pulse test: t
2. Pulse test: t
To evaluate the conduction losses use the following equation:
P = 0.430 x I
Symbol
Symbol
Symbol
P
V
V
I
R
V
F(RMS)
I
ARM
ARM
ASM
V
I
F(AV)
I
T
FSM
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.
th(j-c)
R
RRM
F
T
dPtot
stg
dTj
(1)
(2)
j
(1)
(2)
(2)
Figure 11
<
Repetitive peak reverse voltage
Forward rms current
Average forward current, δ = 0.5
Surge non repetitive forward current
Repetitive peak avalanche power
Maximum repetitive peak
avalanche voltage
Maximum repetitive peak
avalanche voltage
Storage temperature range
Maximum operating junction temperature
Junction to case
Reverse leakage
current
Forward voltage drop
Rth(j-a)
1
p
p
F(AV)
Absolute ratings (limiting values, at T
specified)
Thermal parameters
Static electrical characteristics
= 5 ms, δ < 2%
= 380 µs, δ < 2%
Parameter
condition to avoid thermal runaway for a diode on its own heatsink
+ 0.0075 x I
F
Doc ID 022039 Rev 1
2
(RMS)
T
T
T
T
T
T
j
j
j
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
Parameter
t
t
Parameter
p
p
Test conditions
< 1 µs, T
< 1 µs, T
V
I
I
F
F
j
j
R
< 150 °C, I
< 150 °C, I
= 10 A
= 20 A
(3)
= V
T
t
T
p
c
j
RRM
= 10 ms sine-wave
= 25 °C, t
= 130 °C
amb
Figure 4
AR
AR
= 25 °C unless otherwise
< 69 A
< 69 A
Min.
p
-
-
-
-
-
-
and 5. More details regarding the
= 1 µs
0.495
0.410
0.570
0.510
Typ.
15
20
-65 to +175
Value
1.3
18400
Value
0.535
0.460
0.630
0.580
Max.
400
150
STPS20SM60
60
60
20
80
80
85
50
°C/W
Unit
Unit
mA
µA
Unit
V
°C
°C
W
V
A
A
A
V
V