STPS2060C STMicroelectronics, STPS2060C Datasheet - Page 2

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STPS2060C

Manufacturer Part Number
STPS2060C
Description
High Voltage Power Schottky Rectifier
Manufacturer
STMicroelectronics
Datasheet

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Characteristics
1
Table 2.
Table 3.
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.55 x I
2/7
Symbol
Symbol
R
R
V
I
th(j-c)
R
th(c)
F
(1)
(2)
Junction to case
Reverse leakage current
Forward voltage drop
F(AV)
Characteristics
Thermal resistance
When the diodes 1 and 2 are used simultaneously:
∆ T
Static electrical characteristics (per diode)
j
(diode 1) = P(diode1) x R
+ 0.015 I
Parameter
F
2
(RMS)
Parameter
T
T
T
T
T
T
th(j-c)
j
j
j
j
j
j
= 25° C
= 125° C
= 25° C
= 125° C
= 25° C
= 125° C
(Per diode) + P(diode 2) x R
Test conditions
V
I
I
I
I
F
F
F
F
R
= 10 A
= 10 A
= 20 A
= 20 A
= V
Per diode
Total
Coupling
RRM
Min.
th(c)
Typ.
0.60
0.75
Value
0.15
1.6
0.9
Max.
0.80
0.70
0.94
0.85
150
100
STPS2060C
°C/W
Unit
Unit
mA
µA
V

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