STPS2030C

Manufacturer Part NumberSTPS2030C
DescriptionPower Schottky Rectifier
ManufacturerSTMicroelectronics
STPS2030C datasheet
 


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LOW DROP POWER SCHOTTKY RECTIFIER
MAJOR PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
(max)
F
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD VOLTAGE DROP FOR
HIGHER EFFICIENCY
LOW THERMAL RESISTANCE
AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual Schottky rectifier suited for switch Mode
Power Supply and high frequency DC to DC
converters.
2
Packaged in TO-220AB, D
PAK and I
device is intended for use in low voltage high
frequency inverters, free wheeling and polarity
protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
V
Repetitive peak reverse voltage
RRM
I
RMS forward current
F(RMS)
I
Average forward
F(AV)
current
I
Surge non repetitive forward current
FSM
I
Peak repetitive reverse current
RRM
I
Non repetitive peak reverse current
RSM
P
ARM
Repetitive peak avalanche power
T
Storage temperature range
stg
Tj
Maximum operating junction temperature *
dV/dt
Critical rate of rise of reverse voltage (rated V
dPtot
1
* :
thermal runaway condition for a diode on its own heatsink
dTj
Rth j
(
a
)
July 2003 - Ed: 3A
STPS2030CT/CG/CR
A1
2 x 10 A
30 V
A2
150°C
K
0.40 V
STPS2030CG
2
PAK, this
Parameter
Tc = 140°C
= 0.5
tp = 10 ms Sinusoidal
tp=2 µs square F=1kHz
tp = 100 µs square
tp = 1µs Tj = 25°C
, Tj = 25°C)
R
K
A2
A1
TO-220AB
2
D
PAK
STPS2030CT
A1
2
I
PAK
STPS2030CR
Value
30
30
10
Per diode
20
Per device
180
1
2
3000
- 65 to + 150
150
10000
A2
K
A1
A2
K
Unit
V
A
A
A
A
A
W
°C
°C
V/µs
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STPS2030C Summary of contents

  • Page 1

    ... Tc = 140° Sinusoidal tp=2 µs square F=1kHz tp = 100 µs square tp = 1µ 25° 25° TO-220AB 2 D PAK STPS2030CT PAK STPS2030CR Value Per diode 20 Per device 180 1 2 3000 - 150 150 10000 Unit ...

  • Page 2

    ... STPS2030CT/CG/CR THERMAL RESISTANCES Symbol R th(j-c) Junction to case TO-220AB - D R th(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage R current V * Forward voltage drop F Pulse test : * tp = 380 µs, < evaluate the conduction losses use the following equation : 0. 0.012 I F(AV) F (RMS) Fig. 1: Conduction losses versus average current. ...

  • Page 3

    ... C(nF) 10.0 1.0 0 Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4 35µm). R th(j- 0.8 1.0 1.2 0 STPS2030CT/CG/CR /R th(j-c) t (s) p 1.E-02 1.E- (°C/W) S(Cu)(cm² =tp/T tp 1.E+00 F=1MHz V =30mV OSC RMS T =25°C ...

  • Page 4

    ... STPS2030CT/CG/CR PACKAGE MECHANICAL DATA I²PAK 4/6 REF DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.70 0.93 0.028 0.037 1.14 1.17 0.044 0.046 1.14 1.17 0.044 0.046 0.45 0.60 0.018 0.024 1.23 1.36 0.048 0.054 8.95 9.35 0.352 ...

  • Page 5

    ... G * FLAT ZONE NO LESS THAN 2mm FOOTPRINT 16.90 10.30 3.70 8.90 REF 5.08 1.30 STPS2030CT/CG/CR DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 0.70 0.93 0.027 0.037 1.14 1.70 0.045 0.067 0.45 0.60 0.017 0.024 1.23 1.36 0.048 0.054 8 ...

  • Page 6

    ... STPS2030CT STPS2030CT STPS2030CG STPS2030CG STPS2030CG-TR STPS2030CG STPS2030CR STPS2030CR EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...