STTH1302 STMicroelectronics, STTH1302 Datasheet

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STTH1302

Manufacturer Part Number
STTH1302
Description
High Efficiency Fast Recovery Diode
Manufacturer
STMicroelectronics
Datasheet

Specifications of STTH1302

Insulated Package
TO-220FPAB

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MAIN PRODUCT CHARACTERISTICS
FEATURES AND BENEFITS
DESCRIPTION
Dual center tap rectifier suited for Switch
Mode Power Supplies and high frequency DC to
DC converters.
This device is especially intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
October 2003 - Ed: 2A
Symbol
Suited for SMPS
Low losses
Low forward and reverse recovery times
High surge current capability
High junction temperature
Insulated package: TO-220FPAB:
Insulation voltage = 2000 V
Capacitance = 12 pF
I
V
F(RMS)
I
I
F(AV)
T
FSM
RRM
Tj
stg
V
trr (max)
Tj (max)
F
V
I
F(AV)
(max)
®
RRM
Repetitive peak reverse voltage
RMS forward current
Average forward
current = 0.5
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
DC
2 x 6.5 A
175 °C
0.95 V
200 V
25 ns
TO-220AB /
D
TO-220FPAB
HIGH EFFICIENCY ULTRAFAST DIODE
2
PAK
Parameter
Tc = 155°C
Tc = 145°C
Tc = 135°C
Tc = 110°C
tp = 10 ms sinusoïdal
STTH1302CT/CG/CFP
A2
A1
K
STTH1302CFP
STTH1302CT
TO-220FPAB
TO-220AB
Per diode
Per device
Per diode
Per device
A1
A1
K
K
A2
A2
K
- 65 to + 175
STTH1302CG
K
Value
D
200
175
6.5
6.5
20
13
13
70
2
PAK
A1
A2
Unit
°C
V
A
A
A
A
C
1/7

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STTH1302 Summary of contents

Page 1

... TO-220FPAB STTH1302CFP Parameter TO-220AB / Tc = 155° PAK Tc = 145°C TO-220FPAB Tc = 135° 110° sinusoïdal TO-220AB 2 D PAK STTH1302CG Value 200 20 Per diode 6.5 Per device 13 Per diode 6.5 Per device 175 175 A2 A1 Unit V ...

Page 2

... STTH1302CT/CG/CFP THERMAL RESISTANCES Symbol R Junction to case th (j-c) R Coupling th (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage Current Forward Voltage drop F Pulse test : * ms, < 380 s, < 2% ...

Page 3

... D PAK). Zth (j-c) 1.0 = 0.5 = 0.2 = 0.1 Single pulse 0.1 1.6 1.8 2.0 2.2 2.4 1.E-03 Fig. 5-1: Non repetitive surge peak forward cur- rent (TO-220AB / D I (A) M 100 =tp 1.E-03 1.E+00 1.E+01 STTH1302CT/CG/CFP P=10W P=5W P=2W 0.1 0.2 0.3 0.4 0.5 0.6 0.7 / Rth (j-c) tp(s) 1.E-02 1.E-01 versus overload duration 2 PAK). t(s) t =0.5 1.E-02 1.E- =tp/T tp 0.8 0.9 1 =tp/T 1.E+00 per diode T =25° =75° ...

Page 4

... STTH1302CT/CG/CFP Fig. 5-2: Non repetitive surge peak forward current versus overload duration (TO-220FPAB t(s) t =0.5 0 1.E-03 1.E-02 Fig. 7: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 100 V ( Fig. 9: Reverse recovery time versus dI confidence, per diode). ...

Page 5

... REF STTH1302CT/CG/CFP 2 PAK). S(cm² DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 0.49 0.70 0.019 0.027 0.61 ...

Page 6

... STTH1302CT/CG/CFP PACKAGE MECHANICAL DATA 2 D PAK FLAT ZONE NO LESS THAN 2mm FOOTPRINT 16.90 10.30 8.90 6/7 REF 5.08 1.30 3.70 DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 ...

Page 7

... STTH1302CFP STTH1302CFP STTH1302CG STTH1302CG STTH1302CG-TR STTH1302CG Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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