STTH506 STMicroelectronics, STTH506 Datasheet - Page 3

• Manufacturer Part Number: STTH506
• Description: Turbo 2 ultrafast _ high voltage rectifier
• Manufacturer: STMicroelectronics

Specifications of STTH506

• Insulated Voltage: 2500 VRMS
• Typical Package Capacitance: 12 pF

STTH506
Figure 3.
Figure 5.
Figure 7.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
14
12
10
350
300
250
200
150
100
8
6
4
2
0
50
1.E-03
0
Z
I
0
Q (nC)
RM
th(j-c)
Single pulse
rr
V =400V
T =125°C
TO-220AC
V =400V
T =125°C
R
j
DPAK
(A)
R
j
I =0.25 x I
50
F
50
/R
th(j-c)
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220AC, DPAK)
Peak reverse recovery current
versus dI
Reverse recovery charges versus
dI
100
F(AV)
100
F
/dt (typical values)
150
I =0.5 x I
150
1.E-02
F
200
F(AV)
dI /dt(A/µs)
200
dI /dt(A/µs)
F
F
F
/dt (typical values)
t (s)
p
250
250
I =2 x I
F
I =I
F
F(AV)
F(AV)
300
300
I =I
1.E-01
F
F(AV)
I =2 x I
F
350
350
I =0.5 x I
F
F(AV)
400
400
F(AV)
450
450
1.E+00
500
500
Figure 4.
Figure 6.
Figure 8.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
250
200
150
100
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
50
1.E-03
0
0
Z
t (ns)
0
S factor
rr
th(j-c)
TO-220FPAC
Single pulse
50
50
/R
impedance junction to case versus
pulse duration (TO-220FPAC)
Reverse recovery time versus
dI
dI
Relative variation of thermal
Softness factor versus
th(j-c)
I =2 x I
F
100
100
1.E-02
F
F
/dt (typical values)
/dt (typical values)
F(AV)
150
150
I =I
F
F(AV)
200
200
dI /dt(A/µs)
dI /dt(A/µs)
F
F
1.E-01
t (s)
p
250
250
I =0.5 x I
300
F
300
F(AV)
350
350
1.E+00
Characteristics
400
400
I = 2 x I
V = 400 V
T = 125° C
F
j
R
V =400V
T =125°C
450
450
j
R
1.E+01
F(AV)
500
500
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