STTH2R02 STMicroelectronics, STTH2R02 Datasheet - Page 4

• Manufacturer Part Number: STTH2R02
• Description: Ultrafast recovery diode
• Manufacturer: STMicroelectronics

Characteristics
4/9
Figure 5.
Figure 7.
Figure 9.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
60
50
40
30
20
10
1.E-03
10
0
1
10
1
Single pulse
S
cu
SMB
=1cm²
1.E-02
Relative variation of thermal
impedance junction to case versus
pulse duration (SMB)
Junction capacitance versus
reverse applied voltage (typical
values)
Reverse recovery time versus dI
(typical values)
1.E-01
10
1.E+00
100
T
T
j
j
=125°C
=25°C
1.E+01
100
1.E+02
V
dI
osc
F=1MHz
T
F
t
=30mV
P
/dt(A/µs)
j
=25°C
(s)
V
V
R
I
R
F
=160V
=2A
(V)
RMS
1.E+03
1000
1000
F
/dt
Figure 6.
Figure 8.
Figure 10. Peak reverse recovery current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
60
50
40
30
20
10
6
5
4
3
2
1
0
1.E-03
0
10
10
Single pulse
Lleads=10mm
V
DO-15
I
R
V
F
=160V
R
=2A
I
F
=160V
=2A
1.E-02
Relative variation of thermal
impedance junction to case versus
pulse duration (DO-15)
Reverse recovery charges versus
dI
versus dI
F
/dt (typical values)
1.E-01
F
/dt (typical values)
1.E+00
100
100
T
T
T
j
=125°C
j
=125°C
j
=25°C
1.E+01
T
j
=25°C
1.E+02
dI
dI
F
F
t
/dt(A/µs)
/dt(A/µs)
P
(s)
STTH2R02
1.E+03
1000
1000