STTH10002 STMicroelectronics, STTH10002 Datasheet - Page 2

• Manufacturer Part Number: STTH10002
• Description: Ultrafast recovery diode
• Manufacturer: STMicroelectronics

Characteristics
1
Table 1.
Table 2.
Table 3.
1. Pulse test: t
2. Pulse test: t
2/8
Symbol
Symbol
I
F(RMS)
V
I
V
I
Symbol
I
F(AV)
T
FSM
R
RRM
R
T
F
R
stg
(1)
(2)
th(j-c)
j
th(c)
Reverse leakage current
Forward voltage drop
Repetitive peak reverse voltage
RMS forward current
Average forward current, δ = 0.5
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
p
p
Characteristics
Absolute ratings (limiting values at T
Thermal parameters
When the two diodes 1 and 2 are used simultaneously:
∆Tj(diode 1) = P (diode 1) X R
Static electrical characteristics
To evaluate the conduction losses use the following equation:
P = 0.63 x I
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
Junction to case
Coupling
Parameter
F(AV)
+ 0.0034 I
F
2
(RMS)
Parameter
th(j-c)
Parameter
T
T
T
T
T
j
j
j
j
j
= 25° C
= 125° C
= 25° C
= 125° C
= 150° C
Per diode
Total
(Per diode) + P (diode 2) x R
Per diode
Per diode T
Per device T
t
p
Test conditions
= 10 ms Sinusoidal
j
= 25° C, unless otherwise specified)
V
I
I
I
I
I
F
F
F
F
F
c
R
c
= 50 A
= 100 A
= 100 A
= 50 A
= 100 A
= 100° C
= V
= 95° C
RRM
Min.
th(c)
0.90
0.72
0.86
Typ
50
-55 to + 175
Value
0.55
Value
0.1
200
150
750
150
1
50
Max.
1.15
0.80
0.97
500
1.0
50
STTH10002
1
° C/W
Unit
Unit
Unit
° C
° C
µA
V
A
A
A
V