STM32F101T6 STMicroelectronics, STM32F101T6 Datasheet - Page 50

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STM32F101T6

Manufacturer Part Number
STM32F101T6
Description
Mainstream Access line, ARM Cortex-M3 MCU with 32 Kbytes Flash, 36 MHz CPU
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM32F101T6

Core
ARM 32-bit Cortex™-M3 CPU
Peripherals Supported
timers, ADC, SPIs, I2Cs and USARTs
Conversion Range
0 to 3.6 V
Systick Timer
24-bit downcounter

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Electrical characteristics
5.3.11
50/79
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device is monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC61967-2 standard which specifies the test board and the pin loading.
Table 30.
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Table 31.
1. Based on characterization results, not tested in production.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
These tests are compliant with EIA/JESD 78 IC latch-up standard.
Table 32.
Symbol Parameter
V
V
Symbol
Symbol
S
ESD(HBM)
ESD(CDM)
EMI
LU
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin
Peak level
Static latch-up class
Electrostatic discharge
voltage (human body model)
Electrostatic discharge
voltage (charge device model)
EMI characteristics
ESD absolute maximum ratings
Electrical sensitivities
Parameter
V
LQFP100 package
compliant with
IEC 61967-2
Ratings
DD
= 3.3 V, T
Conditions
Doc ID 15058 Rev 5
A
T
= 25 °C,
A
= +85 °C conforming to JESD78A
T
conforming to JESD22-A114
T
conforming to JESD22-C101
A
A
= +25 °C
= +25 °C
0.1 MHz to 30 MHz
30 MHz to 130 MHz
130 MHz to 1GHz
SAE EMI Level
frequency band
Monitored
Conditions
Conditions
STM32F101x4, STM32F101x6
Max vs. [f
Class
2
II
8/36 MHz
3.5
13
7
8
HSE
Maximum
value
/f
HCLK
2000
500
II level A
Class
(1)
]
dBµV
Unit
Unit
-
V

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