STM32F215ZE STMicroelectronics, STM32F215ZE Datasheet - Page 115

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STM32F215ZE

Manufacturer Part Number
STM32F215ZE
Description
High-performance ARM Cortex-M3 MCU with 512 Kbytes Flash, 120 MHz CPU, ART Accelerator, HW crypto
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM32F215ZE

10/100 Ethernet Mac With Dedicated Dma
supports IEEE 1588v2 hardware, MII/RMII

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Note:
Table 63.
1. Better performance could be achieved in restricted V
2. Based on characterization, not tested in production.
ADC accuracy vs. negative injection current: Injecting a negative current on any of the
standard (non-robust) analog input pins should be avoided as this significantly reduces the
accuracy of the conversion being performed on another analog input. It is recommended to
add a Schottky diode (pin to ground) to standard analog pins which may potentially inject
negative currents.
Any positive injection current within the limits specified for I
Section 5.3.16
Figure 49. ADC accuracy characteristics
1. Example of an actual transfer curve.
2. Ideal transfer curve.
3. End point correlation line.
4. E
Symbol
a
EO = Offset Error: deviation between the first actual transition and the first ideal one.
EG = Gain Error: deviation between the last ideal transition and the last actual one.
ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one.
EL = Integral Linearity Error: maximum deviation between any actual transition and the end point
correlation line.
EO
EG
ED
ET
EL
T
= Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves.
Total unadjusted error
Offset error
Gain error
Differential linearity error
Integral linearity error
ADC accuracy
does not affect the ADC accuracy.
Parameter
(1)
Doc ID 17050 Rev 6
f
f
V
PCLK2
ADC
DDA
= 30 MHz, R
= 1.8 to 3.6 V
= 60 MHz,
Test conditions
DD
, frequency and temperature ranges.
AIN
< 10 kΩ,
INJ(PIN)
Electrical characteristics
and ΣI
±1.5
±1.5
±1.5
Typ
±2
±1
INJ(PIN)
Max
±2.5
±3
±2
±5
±3
(2)
in
115/168
Unit
LSB

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