SPV1001N STMicroelectronics, SPV1001N Datasheet

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SPV1001N

Manufacturer Part Number
SPV1001N
Description
Cool bypass switch for photovoltaic applications
Manufacturer
STMicroelectronics
Datasheet

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SPV1001N30
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ST
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SPV1001N30
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Part Number:
SPV1001N40
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SPV1001N40
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20 000
Features
Applications
Description
The SPV1001N is a system-in-package solution
for photovoltaic applications to perform cool
bypass rectification similar to that of a
conventional Schottky diode but with much lower
forward voltage drop and reverse leakage current.
The device consists of a power MOSFET
transistor which charges a capacitor during the
OFF time, and drives its gate during the ON time
using the charge previously stored in the
capacitor.
The ON and OFF times are set to reduce the
average voltage drop across the drain and source
terminals, resulting in reduced power dissipation.
Table 1.
November 2011
SPV1001N30 I
SPV1001N40 I
Very low forward voltage drop
Very low reverse leakage current
150 °C operating junction temperature
Photovoltaic panels
Device summary
SPV1001N30
SPV1001N40
Order codes
F
F
=12.5 A, V
=12.5 A, V
R
R
Cool bypass switch for photovoltaic applications
=30 V
=40 V
Doc ID 018938 Rev 2
PQFN 5 x 6 mm
Package
PQFN 5 x 6 mm
Tape and reel
Packaging
Catodo
SPV1001N
www.st.com
Anodo
1/9
9

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SPV1001N Summary of contents

Page 1

... Applications ■ Photovoltaic panels Description The SPV1001N is a system-in-package solution for photovoltaic applications to perform cool bypass rectification similar to that of a conventional Schottky diode but with much lower forward voltage drop and reverse leakage current. The device consists of a power MOSFET ...

Page 2

... Junction temperature operating range J T Storage temperature range STG R Thermal resistance, junction-to-case thJC 2/9 Parameter SPV1001N30 Parameter -40 to 150 -40 to 150 Doc ID 018938 Rev 2 SPV1001N Value Unit SPV1001N40 12.5 12.5 A 250 250 A ≥ ≥ Value Unit -40 to 150 °C -40 to 150 ° ...

Page 3

... SPV1001N 2 Electrical characteristics Table 4. Electrical characteristics Symbol Parameter V AVG forward voltage drop F,AVG I Reverse leakage current R D TON/T ratio V Forward voltage drop F Note: For correct power dissipation and heatsink sizing, please refer to SPV1001 N30 Test conditions Min. Typ. Max. Min. Typ. Max. ...

Page 4

... It consists of a power MOSFET transistor which charges a capacitor during the OFF time, and drives its gate during the ON time using the charge previously stored in the capacitor. The ON and OFF times are set to reduce the average voltage drop across the drain and source terminals, resulting in reduced power dissipation. 4/9 Doc ID 018938 Rev 2 SPV1001N ...

Page 5

... SPV1001N Figure 1. Average forward power dissipation vs average forward current @ 25°C of ambient temperature Figure 3. Reverse current 1. Epoxy printed board FR4 µm Figure 2. Average forward power dissipation vs average forward current @ 75°C of ambient temperature Figure 4. Thermal resistance junction-to- ambient vs copper surface under (1) tab ...

Page 6

... ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK trademark. Table 5. PQFN mechanical data Dim NXb 6/9 mm Min. Typ. 0.85 0.80 0.02 0 5.00 4.26 4.16 6.00 2.50 2.40 1.27 1.20 1.10 0.30 0.45 Doc ID 018938 Rev 2 SPV1001N ® Max. 0.95 0.05 4.36 2.60 1.30 ...

Page 7

... SPV1001N Figure 5. PQFN drawing Doc ID 018938 Rev 2 Package mechanical data 7/9 ...

Page 8

... Revision history 5 Revision history Table 6. Document revision history Date 20-Jun-2011 16-Nov-2011 8/9 Revision 1 Initial release 2 Updated Figure 3 Doc ID 018938 Rev 2 SPV1001N Changes ...

Page 9

... SPV1001N Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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