ACST10 STMicroelectronics, ACST10 Datasheet - Page 4

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ACST10

Manufacturer Part Number
ACST10
Description
Overvoltage protected AC switch
Manufacturer
STMicroelectronics
Datasheet

Specifications of ACST10

High Noise Immunity
static dV/dt > 2000 V/μs
To-220fpab Insulated Package
1500 V rms

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Characteristics
4/13
Figure 6.
Figure 8.
Figure 10. Relative variation of holding (I
2.5
2.0
1.5
1.0
0.5
0.0
10000
1000
100
-50
100
10
10
1
I ,I [T ]/I ,I [T = 25 °C]
1
0.01
H
0
I
L
TSM
I (A)
TM
T
j
=125 °C
J
-25
(A), I t (A s)
H
L
On-state characteristics
(maximal values)
Non repetitive surge peak on-state
current for a sinusoidal pulse and
corresponding value of I²t
and latching current (I
junction temperature
2
j
1
0
2
T
j
=25 °C
0.10
dI/dt limitation: 100 A/µs
t (ms)
p
25
2
Typical values
50
V
TM
(V)
T (°C)
3
J
1.00
75
L
) vs.
T
I²t
j
initial=25 °C
4
100
V
R
I
to
d
TSM
T
Doc ID 15237 Rev 3
j
= 35 mΩ
= 0.90 V
max :
I
I
H
L
H
)
10.00
125
5
Figure 7.
Figure 9.
Figure 11. Relative variation of critical rate of
110
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
90
80
70
60
50
40
30
20
10
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
I , V ,[T /I [T = 25 °C]
1
0.1
GT
(di/dt)c [(dV/dt)c] / Specified (di/dt)c
I
TSM
T
Repetitive
V Q1-Q2-Q3
C
GT
=105 °C
GT
(A)
-25
j
I Q3
GT
GT
Non repetitive surge peak on-state
current vs. number of cycles
(T
Relative variation of gate triggering
current (I
voltage vs. junction temperature
decrease of main current (di/dt)c
vs. (dV/dt)c
I Q1-Q2
GT
j
j
initial = 25 °C)
0
1
10
T
Non repetitive
T (°C)
j
initial=25 °C
j
GT
25
) and gate triggering
50
10
ACST10-7Cxx
(dV/dt)c (V/µs)
Number of cycles
100
ACST10-7Sxx
75
t=20ms
One cycle
100
ACST10
100
125

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