STB85NF3LL STMicroelectronics, STB85NF3LL Datasheet - Page 4

• Manufacturer Part Number: STB85NF3LL
• Description: N-Channel 30V - 0.006Ohm - 85A - D2PAK LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 5.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
t
t
C
I
I
DS(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
d(off)
DSS
GSS
fs
Q
t
oss
t
t
t
rss
iss
gs
gd
c
r
f
f
g
(1)
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
DS
= 0)
Parameter
Parameter
Parameter
GS
= 0)
I
V
V
V
V
V
V
V
I
V
V
V
V
V
R
Figure 12 on page 8
Vclamp =24V, I
R
Figure 14 on page 8
D
D
DS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DD
DD
G
G
= 250µA, V
= 40 A
=4.7Ω, V
= 4.7Ω, V
= V
= 10V, I
= 15V, I
= Max rating,
= Max rating @125°C
= ±16V
= 4.5V, I
=25V, f = 1 MHz,
= 0
=4.5V
> I
=24V, I
Test conditions
Test conditions
Test conditions
D(on)
GS
, I
D
D
D
D
x R
GS
= 40A
D
= 30A,
= 60A
GS
= 250µA
GS
= 40A
=4.5V
D
DS(on)max,
= 0
= 4.5V
=30A
Min.
Min.
Min.
30
1
0.0075
0.006
Typ.
2210
Typ.
12.5
635
138
Typ.
36.5
36.5
130
30
30
22
32
23
40
9
STB85NF3LL
0.0095
0.008
Max.
Max.
±100
Max.
40
10
1
Unit
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
S
V
V
Ω
Ω