STP45N65M5 STMicroelectronics, STP45N65M5 Datasheet - Page 3

• Manufacturer Part Number: STP45N65M5
• Description: N-channel 650 V, 0.085 Ohm, 27 A, MDmesh(TM) V Power MOSFET in TO-220
• Manufacturer: STMicroelectronics

STx45N65M5
1
Electrical ratings
Table 2.
1. Limited by maximum junction temperature.
2. I
Table 3.
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 4.
R
Symbol
Symbol
Symbol
R
dv/dt
R
I
thj-pcb
P
E
DM
V
thj-case
thj-amb
I
V
T
AR
SD
I
I
TOT
AS
ISO
T
GS
stg
D
D
j
(1)
(2)
≤ 35 A, di/dt ≤ 400 A/µs; V
(1)
Avalanche current, repetetive or not repetetive
(pulse width limited by T
Single pulse avalanche energy (starting t
I
d
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; T
Storage temperature
Max. operating junction temperature
Thermal resistance junction-
case max
Thermal resistance junction-
pcb max
Thermal resistance junction-
ambient max
= I
Absolute maximum ratings
Thermal data
Avalanche characteristics
AR
; V
dd
Parameter
C
=50)
= 25 °C)
Parameter
DD
Parameter
C
Doc ID 022854 Rev 1
< 80 % V
= 25 °C
jmax
)
(BR)DSS
C
C
= 25 °C
= 100 °C
D
0.60
2
30
PAK
j
=25°C,
TO-220FP
3.13
TO-220
TO-247
D
Value
62.5
2
140
208
35
22
PAK
TO-220
- 55 to 150
Value
TBD
TBD
Value
± 25
150
15
0.60
TO-220FP
Electrical ratings
140
35
22
2500
TO-247
40
50
(1)
(1)
(1)
Unit
mJ
A
°C/W
°C/W
°C/W
Unit
Unit
V/ns
°C
°C
W
V
A
A
A
V
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