The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4501GSD

Manufacturer Part NumberAP4501GSD
DescriptionThe Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP4501GSD datasheet
 

Specifications of AP4501GSD

Vds30VVgs±20V
Rds(on) / Max(m?) Vgs@10v27Rds(on) / Max(m?) Vgs@4.5v50
Qg (nc)8.4Qgs (nc)2.1
Qgd (nc)4.7Id(a)7
Pd(w)2ConfigurationComplementary N-P
PackagePDIP-8  
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Advanced Power
Electronics Corp.
▼ ▼ ▼ ▼ Simple Drive Requirement
▼ ▼ ▼ ▼ Low On-resistance
▼ ▼ ▼ ▼ Fast Switching Characteristic
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
Absolute Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current
D
A
I
@T
=70℃
Continuous Drain Current
D
A
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
A
Linear Derating Factor
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-a
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D2
D2
D1
D1
G2
S2
PDIP-8
G1
S1
N-channel
3
3
1
Parameter
3
AP4501GSD
Pb Free Plating Product
N-CH BV
30V
DSS
R
27mΩ
DS(ON)
I
D
P-CH BV
-30V
DSS
R
49mΩ
DS(ON)
I
-5A
D
D1
G1
G2
S1
Rating
Units
P-channel
30
-30
±20
±20
7
-5
5.8
-4.2
40
-30
2
0.016
W/℃
-55 to 150
-55 to 150
Value
Unit
℃/W
Max.
62.5
200504042
7A
D2
S2
V
V
A
A
A
W

AP4501GSD Summary of contents

  • Page 1

    ... Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PDIP N-channel Parameter 3 AP4501GSD Pb Free Plating Product N-CH BV 30V DSS R 27mΩ DS(ON P-CH BV -30V DSS R 49mΩ DS(ON ...

  • Page 2

    ... AP4501GSD N-CH Electrical Characteristics@T Symbol BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

  • Page 3

    ... D V =-24V DS V =-4. =-15V =6Ω, =15Ω = =-25V DS f=1.0MHz Test Conditions 2 I =-1.7A =-5A dI/dt=100A/µs AP4501GSD Min. Typ. Max. Units =-250uA -30 - =-1mA - -0. =-250uA - =- ...

  • Page 4

    ... AP4501GSD N-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 C J 0.1 0. Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

  • Page 5

    ... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms 0.01 1s 10s DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance t t d(off) f Fig 12. Gate Charge Waveform AP4501GSD f=1.0MHz Drain-to-Source Voltage (V) DS Duty Factor = 0.5 0.2 0.1 0.05 0.02 0.01 P Single Pulse DM t Duty Factor = t/T Peak ...

  • Page 6

    ... AP4501GSD P-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 120 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 C j 0.1 0.01 0.1 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of Reverse Diode ...

  • Page 7

    ... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 0.1 10ms 100ms 0.01 1s 10s DC 0.001 10 100 0.0001 Fig 10. Typical Capacitance Characteristics -4. d(off) f Fig 12. Gate Charge Waveform AP4501GSD f=1.0MHz Drain-to-Source Voltage (V) DS Duty Factor = 0.5 0.2 0.1 0.05 0.02 0. Single Pulse t T Duty Factor = t/T Peak T ...