AP4501GSD Advanced Power Electronics Corp., AP4501GSD Datasheet
AP4501GSD
Specifications of AP4501GSD
Related parts for AP4501GSD
AP4501GSD Summary of contents
Page 1
... Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PDIP N-channel Parameter 3 AP4501GSD Pb Free Plating Product N-CH BV 30V DSS R 27mΩ DS(ON P-CH BV -30V DSS R 49mΩ DS(ON ...
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... AP4501GSD N-CH Electrical Characteristics@T Symbol BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... D V =-24V DS V =-4. =-15V =6Ω, =15Ω = =-25V DS f=1.0MHz Test Conditions 2 I =-1.7A =-5A dI/dt=100A/µs AP4501GSD Min. Typ. Max. Units =-250uA -30 - =-1mA - -0. =-250uA - =- ...
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... AP4501GSD N-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 C J 0.1 0. Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...
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... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms 0.01 1s 10s DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance t t d(off) f Fig 12. Gate Charge Waveform AP4501GSD f=1.0MHz Drain-to-Source Voltage (V) DS Duty Factor = 0.5 0.2 0.1 0.05 0.02 0.01 P Single Pulse DM t Duty Factor = t/T Peak ...
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... AP4501GSD P-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 120 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 C j 0.1 0.01 0.1 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of Reverse Diode ...
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... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 0.1 10ms 100ms 0.01 1s 10s DC 0.001 10 100 0.0001 Fig 10. Typical Capacitance Characteristics -4. d(off) f Fig 12. Gate Charge Waveform AP4501GSD f=1.0MHz Drain-to-Source Voltage (V) DS Duty Factor = 0.5 0.2 0.1 0.05 0.02 0. Single Pulse t T Duty Factor = t/T Peak T ...