Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness

AP4506GEM-HF

Manufacturer Part NumberAP4506GEM-HF
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP4506GEM-HF datasheet
 

Specifications of AP4506GEM-HF

Vds30VVgs±20V
Rds(on) / Max(m?) Vgs@10v30Rds(on) / Max(m?) Vgs@4.5v36
Qg (nc)8.3Qgs (nc)1.5
Qgd (nc)4Id(a)6.4
Pd(w)2ConfigurationComplementary N-P
PackageSO-8  
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P-CH Electrical Characteristics@T
Symbol
Parameter
BV
Drain-Source Breakdown Voltage
DSS
R
Static Drain-Source On-Resistance
DS(ON)
V
Gate Threshold Voltage
GS(th)
g
Forward Transconductance
fs
I
Drain-Source Leakage Current
DSS
Drain-Source Leakage Current (T
I
Gate-Source Leakage
GSS
Q
Total Gate Charge
g
Q
Gate-Source Charge
gs
Q
Gate-Drain ("Miller") Charge
gd
t
Turn-on Delay Time
d(on)
t
Rise Time
r
t
Turn-off Delay Time
d(off)
t
Fall Time
f
C
Input Capacitance
iss
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
Source-Drain Diode
Symbol
Parameter
V
Forward On Voltage
SD
t
Reverse Recovery Time
rr
Q
Reverse Recovery Charge
rr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in
copper pad of FR4 board , t <10sec ; 135℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
o
=25
C(unless otherwise specified)
j
Test Conditions
V
=0V, I
=-250uA
GS
D
2
V
=-10V, I
GS
V
=-4.5V, I
GS
V
=V
, I
DS
GS
D
V
=-10V, I
DS
V
=-24V, V
DS
o
V
=-24V, V
=70
C)
DS
j
V
=+20V, V
GS
2
I
=-5A
D
V
=-24V
DS
V
=-4.5V
GS
2
V
=-15V
DS
I
=-1A
D
R
=3.3Ω,V
G
R
=15Ω
D
V
=0V
GS
V
=-20V
DS
f=1.0MHz
Test Conditions
2
I
=-1.5A, V
S
GS
2
I
=-5A, V
S
GS
dI/dt=-100A/µs
AP4506GEM-HF
Min.
Typ.
-30
-
=-5A
-
-
D
=-3A
-
-
D
=-250uA
-1
-
=-5A
-
12
D
=0V
-
-
GS
=0V
-
-
GS
=0V
-
-
DS
-
12.6
-
2.4
-
6.2
-
7
-
5.6
=-10V
-
24
GS
-
35
-
1045 1670
-
220
-
150
Min.
Typ.
=0V
-
-
=0V
-
23
-
15
Max. Units
-
V
40
mΩ
52
mΩ
-3
V
-
S
uA
-1
uA
-25
uA
+30
nC
20
nC
-
nC
-
ns
-
ns
-
ns
-
ns
-
pF
pF
-
-
pF
Max. Units
-1.3
V
-
ns
-
nC
3